Bowers, John - Department of Electrical and Computer Engineering, University of California at Santa Barbara

• Coherent Optical Receiver with Linear XOR Phase Detection and Frequency Down-Conversion
• 410 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 4, APRIL 2000 Optical Add/Drop Multiplexers Based on X-Crossing
• 1630 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 15, AUGUST 1, 2006 A Single Regrowth Integration Platform for Photonic
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 3, FEBRUARY 1, 2007 149 High Output Saturation and High-Linearity
• IMPROVED FUNCTIONALITY AND PERFORMANCE IN PHOTONIC INTEGRATED CIRCUITS
• Extinction ratio regeneration, signal re-amplification (2R), and broadband wavelength
• 40 Gbit=s photonic receivers integrating UTC photodiodes with high-and
• InP-based Waveguide Photodetector with Integrated Photon Multiplication
• Ultrahigh power-bandwidth-product performance of low-temperature-grown-GaAs based metal-semiconductor-metal
• Hybrid Silicon Evanescent Modulators Hui-Wen Chen, Ying-hao Kuo, and John E. Bowers
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 20, OCTOBER 15, 2008 1667 A Distributed Bragg Reflector Silicon
• Invited paper Recent advances in photodetectors with distributed optical
• A 40 GHz Mode Locked Silicon Evanescent Laser Brian R. Kocha
• An all-silicon Raman laser Haisheng Rong1
• Polarization control of 1.3 m-wavelength vertical cavity surface emitting laser (VCSEL) fabricated by orientation-mismatched wafer bonding
• CFB3 Fig. 1. (a)Blockdiagramfor frequency-domain photoconductive sampling. (b) LTG-
• An Electrothermally-Actuated, Dual-Mode Micromirror for Large Bi-Directional Scanning
• Integration of SiON gratings with SOI Richard Jones
• > 2006 SPIE Photonics West 1 The evolution of optical communication systems has facilitated the required bandwidth to meet the
• 150 mm InP-to-Silicon Direct Wafer Bonding for Silicon Photonic Integrated Circuits
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 6, JUNE 2001 623 MetalSemiconductorMetal Traveling-Wave
• 20 / CLEO 2001 / MONDAY MORNING Photodlode responseto optlcal pulse
• University of California Year 2004 Paper 890
• INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF MICROMECHANICS AND MICROENGINEERING J. Micromech. Microeng. 15 (2005) 22642276 doi:10.1088/0960-1317/15/12/008
• A distributed feedback silicon evanescent laser Alexander W. Fang, Erica Lively, Ying-Hao Kuo, Di Liang, John. E. Bowers
• Native-oxide-confined high-index-contrast =1.15 m strain-compensated InGaAs single quantum well ridge waveguide lasers
• Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
• Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures
• Ultraviolet picosecond optical pulse generation from a mode-locked InGaN laser diode
• ErAs/InGaAs superlattice Seebeck coefficient Gehong Zeng, John E. Bowers
• Direct measurement of thin-film thermoelectric figure of merit Rajeev Singh,1,a
• Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
• 2162 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 34, NO. 11, NOVEMBER 1998 Effects of Carrier Cooling and Carrier Heating in
• Semicond. Sci. Technol. 14 (1999) 419424. Printed in the UK PII: S0268-1242(99)98599-1 Study of temperature effects on loss
• High-Index-Contrast Ridge Waveguide Lasers Fabricated Via Oxygen-Enhanced Wet Thermal Oxidation
• Abstract--Utilizing the high index contrast of a deep-etched, non-selectively oxidized AlGaAs/InAlGaAs GRINSCH
• Abstract--A modified wet thermal process is used to oxidize both GaAs waveguide and GaAsP/InGaAsN MQW layers of
• High Gain, High Efficiency Vertical-Cavity Semiconductor Optical Amplifiers
• 1550-nm Vertical-Cavity SOAs for Optically Preamplified High Bit rate Toshio Kimura, Staffan Bjrlin, Garrett Cole, Hsu-Feng Chou, John Bowers
• 2009 International Topical Meeting on Microwave Photonics 14-16, October -Valencia ISBN 978-84-8363-424-0
• September 1982 / Vol. 7, No. 9 / OPTICS LETTERS 463 Fiber-optic signal processor with applications to matrix-vector
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 6, JUNE 2000 711 Simultaneous OTDM Demultiplexing and Detection
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 13, NO. 8, AUGUST 2001 791 Distributed Effects Model for Cascaded
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 12, DECEMBER 2002 1725 Simultaneous All-Optical Demultiplexing of a
• THURSDAY AFTERNOON / OFC 2003 / VOL. 2 / 583 Thursday,March27
• Compact 160-Gb/s Add-Drop Multiplexing with a 40-Gb/s Base-Rate
• 530 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 2, FEBRUARY 2004 Photocurrent-Assisted Wavelength (PAW) Conversion
• 486 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 2, FEBRUARY 2005 Compact Optical 3R Regeneration Using a
• Integrated Optical Label Read and Payload Envelope Detection Circuit for Optical Label Swapping
• 1846 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 17, SEPTEMBER 1, 2006 All-Optical Payload Envelope Detection for Variable
• SFDR Improvement of a Coherent Receiver Using Feedback Hsu-Feng Chou, Anand Ramaswamy, Darko Zibar, Leif A. Johansson, John E. Bowers,
• Hybrid Silicon Evanescent Lasers John E. Bowersa
• An electrically pumped hybrid silicon evanescent amplifier Hyundai Park, Alexander W. Fang, and John E. Bowers
• Hybrid Silicon Evanescent Photonic Integrated Circuit John E. Bowersa
• Integrated Hybrid Silicon Evanescent Racetrack Laser and Photodetector Alexander W. Fang, Richard Jones, Hyundai Park, Oded Cohen, Omri Raday, Mario
• 1310nm silicon evanescent laser Hsu-Hao Chang1
• Efficient Mode Converter for Coupling between Fiber and Micrometer Size Silicon Waveguides
• All-Optical Clock Recovery with Retiming and Reshaping Using a Silicon Evanescent Mode Locked Ring Laser
• Distributed Feedback Silicon Evanescent Laser Alexander W. Fang, E. Lively, Ying-Hao Kuo, Di Liang, and John E. Bowers
• A hybrid silicon evanescent electroabsorption modulator Ying-hao Kuo, Hui-wen Chen, and John E. Bowers
• Low-Temperature, Strong SiO2-SiO2 Covalent Wafer Bonding for IIIV Compound Semiconductors-to-Silicon Photonic
• Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate
• 416 IEEE MICROWAVE AND GUIDED WAVE LETTERS, VOL. 9, NO. 10, OCTOBER 1999 A 100-kHz to 50-GHz Traveling-Wave
• 1920 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 20, NO. 23, DECEMBER 1, 2008 A Hybrid SiliconAlGaInAs Phase Modulator
• Dynamic Distortion Characteristics of Silicon Evanescent Detectors and Phase Modulators
• Microwave Nonlinearities in Ge/Si Avalanche Photodiodes having a GainBandwidth Product of 300 GHz
• Photonic integration: Si or InP substrates? D. Liang and J.E. Bowers
• Single-Chip 40Gb/s Widely-Tunable Transceivers with Integrated SG-DBR Laser, QW EAM, UTC Photodiode, and Low Confinement SOA
• Thermionic emission cooling in single barrier heterostructures Ali Shakouria)
• Experimental Investigation of Thin Film InGaAsPCoolers Christopher J. LaBounty, Ali Shakouri1
• Widely-Tunable Transmitters and Photonic Integrated Circuits Larry A. Coldren, James W. Raring, Jonathon S. Barton, Matt Sysak, and Leif Johansson
• Silicon ring isolators with bonded nonreciprocal magneto-optic garnets
• 2640 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 12, DECEMBER 2004 40-Gb/s Optical Packet Clock Recovery With
• Monolithic germanium/silicon avalanche photodiodes with 340 GHz gainbandwidth
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 7, JULY 2004 1613 Demonstration of Widely Tunable Single-Chip
• Optical Buffering for Next-Generation Routers Emily F. Burmeister, Daniel J. Blumenthal, John E. Bowers
• 338 / OFC 2002 / WEDNESDAY AFTERNOON Wednesday,March20
• IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 11, NO. 2, MARCH/APRIL 2005 329 Optical Clock Recovery Circuits Using
• 1376 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 5, MAY 2004 40-Gb/s Optical Clock Recovery Using a Compact
• Equivalent circuit model of a Ge/Si avalanche photodiode Daoxin Dai1
• A High Power Ge n-i-p waveguide photodetector on Silicon-on-Insulator Substrate
• High Speed Silicon Modulators Hui-Wen Chen, Ying-hao Kuo, John E. Bowers
• Frequency response and bandwidth enhancement in Ge/Si avalanche photodiodes
• 280 CHINESE OPTICS LETTERS / Vol. 7, No. 4 / April 10, 2009 Hybrid silicon modulators
• Origin of the Gain-Bandwidth-Product Enhancement in Separate-Absorption-Charge-Multiplication Ge/Si
• High speed hybrid silicon evanescent Mach-Zehnder modulator and switch
• WAFER BONDED SILICON PHOTONICS Di Liang, Alexander W. Fang, Hui-Wen Chen and John E. Bowers
• A Distributed Bragg Reflector Silicon Evanescent Laser Alexander W. Fanga
• Silicon Evanescent Optical Frequency Comb Generator B. R. Kocha, b
• Hybrid silicon photonic integrated circuits for optical networking E. F. Burmeister, H.-W. Chen, J. P. Mack, Y.-H. Kuo, B. Stameni,
• Integrated Hybrid Lasers and Amplifiers on a Silicon Richard Jones, Matthew N. Sysak
• Hybrid Silicon Integration R. Jones et al. Hybrid Silicon Integration
• A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector
• Hybrid AlGaInAs-silicon evanescent racetrack laser Alexander W. Fang1
• Experimental and Theoretical Analysis of Thermal Impedance in a Hybrid Silicon Evanescent Laser
• 1310nm Silicon Evanescent Laser Hsu-Hao Changa
• Mode-locked silicon evanescent lasers Brian R. Koch1
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 4, APRIL 2004 1035 Nonlinear Properties of Traveling-Wave
• A hybrid silicon evanescent photodetector Hyundai Park1
• A hybrid AlGaInAs-silicon evanescent waveguide photodetector
• High speed data amplification using hybrid silicon evanescent amplifier
• Hybrid Silicon Evanescent Laser in a Silicon-on-Insulator Waveguide
• 230 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 4, FEBRUARY 15, 2007 A Hybrid AlGaInAsSilicon Evanescent Amplifier
• IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 12, NO. 6, NOVEMBER/DECEMBER 2006 1657 Design and Fabrication of Optically Pumped Hybrid
• Scalable Wafer Bonding for Active Photonic Devices on Silicon John E. Bowersa
• 40 C Continuous-Wave Electrically Pumped Hybrid Silicon Evanescent Laser Hyundai Parka
• Design of Hybrid Silicon Evanescent Amplifiers John E. Bowers1
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 10, MAY 15, 2006 1143 A Continuous-Wave Hybrid AlGaInAsSilicon
• Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells
• Novel Laser Diode Structure consisting of a Si Waveguide and Compound-Semiconductor MQW layers for Si Platform Integration
• 2009 International Topical Meeting on Microwave Photonics 14-16, October -Valencia ISBN 978-84-8363-424-0
• Optical Phase Demodulation using a Coherent Receiver with an Ultra-Compact Grating Beam Splitter
• Integrated All-Photonic Coherent Receiver Anand Ramaswamy
• Uni-Traveling-Carrier Photodiodes with Increased Output Response and Low Intermodulation
• 686 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 9, MAY 1, 2007 Novel Optical Phase Demodulator Based on a
• Dynamic range enhancement of a novel phase-locked coherent optical phase
• Tunable and frequency-stabilized CO2 waveguide Zhejiang University
• Optics & Laser Technology 34 (2002) 579584 www.elsevier.com/locate/optlastec
• Fast Optical Clock Recovery and Signal Regeneration Applications of a Monolithic Mode Locked Laser with DBR Mirrors and an Optical Amplifier
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 9, MAY 1, 2007 641 Monolithic Mode-Locked Laser and Optical
• 35 Gb/s Monolithic All-Optical Clock Recovery Pulse Source Brian R. Koch, Jonathan S. Barton, Milan Masanovic, Zhaoyang Hu, John E. Bowers, and Daniel J.
• JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 24, NO. 9, SEPTEMBER 2006 3409 Payload-Envelope Detection and Label-Detection
• Integrated Photonic/RF 40-Gb/s Burst-mode Optical Clock Recovery for Asynchronous Optical Packet Switching
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 7, JULY 2005 1537 Optical Label Swapping Using Payload Envelope
• JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 23, NO. 3, MARCH 2005 1105 Raman-Enhanced Regenerative Ultrafast All-Optical
• 40-Gb/s Optical 3R Regeneration Using a Traveling-wave Electroabsorption Modulator-Based Optical Clock Recovery
• Applications of Traveling-Wave Electroabsorption Modulators in 160 Gbit/s Systems
• 1564 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 6, JUNE 2004 Compact 160-Gb/s AddDrop Multiplexer
• High-speed optical time-division-multiplexed/WDM networks and
• 1416 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 10, OCTOBER 2003 Regenerative 80-Gb/s Fiber XPM Wavelength
• SIMULTANEOUS DEMULTIPLEXING, ELECTRICAL CLOCK RECOVERY, AND OPTICAL CLOCK GENERATION USING
• Optical Packet Switching and Associated Optical Signal Processing D. J. Blumenthal, John Bowers, Yi-Jen Chiu, Hsu-Feng Chou, Bengt-Erik Olsson*, Suresh Rangarajan,
• 792 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 6, JUNE 2002 High Extinction Ratio And Saturation Power
• HIGH-EFFICIENCY MQW ELECTROABSORPTION
• Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector
• Ultrafast valence intersubband hole relaxation in InGaN multiple-quantum-well laser diodes
• High-Speed Traveling-Wave Electroabsorption Modulators Yi-Jen Chiu, Sheng Z. Zhang,a
• 2058 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 18, NO. 12, DECEMBER 2000 All-Optical Label Swapping Networks and
• INTEGRATED TANDEM ELECTROABSORPTION MODULATORS FOR HIGH-SPEED OTDM APPLICATIONS
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 11, NOVEMBER 2000 1471 Integrated Tandem Traveling-Wave Electroabsorption
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 11, NO. 2, FEBRUARY 1999 191 25-GHz Polarization-Insensitive Electroabsorption
• SOA Gate Array Recirculating Buffer for Optical Packet Emily F. Burmeister, John P. Mack, Henrik N. Poulsen, Jonathan Klamkin, Larry A. Coldren,
• ARTICLE IN PRESS Optical Switching and Networking ( )
• Reduction of etched AlGaAs sidewall roughness by oxygen-enhanced wet thermal oxidation
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 3, MARCH 2004 873 Device Saturation Behavior of Submillimeter-Wave
• 2406 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 11, NOVEMBER 2005 Optoelectronic-Based High-Efficiency Quasi-CW
• IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 8, NO. 4, JULY/AUGUST 2002 935 3-D Photonic Circuit Technology
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 13, NO. 6, JUNE 2001 579 InPInGaAsP Wafer-Bonded Vertically Coupled
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 12, NO. 12, DECEMBER 2000 1639 Double-Bonded InPInGaAsP Vertical Coupler
• Invited Paper Tunable vertical-cavity SOAs: a unique combination
• 944 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 5, MAY 2005 Temperature Dependence of the Relaxation
• CWDM vertical-cavity surface-emitting laser array spanning 140 nm of the C, S, and L fiber transmission bands
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 11, NOVEMBER 2003 1501 High-Temperature Characteristics and
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 11, NOVEMBER 2003 1495 High-Power 1320-nm Wafer-Bonded VCSELs With
• 1374 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 9, NO. 5, SEPTEMBER/OCTOBER 2003 Carrier-Confined Vertical-Cavity Semiconductor
• Long-wavelength, two-dimensional, WDM vertical-cavity surface-emitting laser arrays fabricated by
• Dual-Wavelength Vertical-Cavity Surface-Emitting Laser Arrays Fabricated by Nonplanar Wafer Bonding
• Long-wavelength vertical-cavity semiconductor optical amplifiers E. Staffan Bjrlin
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 13, NO. 12, DECEMBER 2001 1271 Vertical-Cavity Amplifying Modulator at 1.3 m
• LONG-WAVELENGTH WDM VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS SPANNING 140 nm
• Inst. Phys. Conf. Ser. No 170: Chapter 4 Paper presented at 28th Int. Symp. Compound Semiconductors, Tokyo, Japan, 14 October 2001
• Abstract--Using a modified, O2-enhanced non-selective wet thermal oxidation process, deep-etched ridge waveguides in
• High Efficiency Oxide-Confined High-Index-Contrast Broad-Area Lasers with Reduced Threshold Current Density and Improved Near-Field Profile
• 598 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 19, NO. 8, APRIL 15, 2007 Single-Facet Folded-Cavity Diode Laser With
• Nonselective oxidation of GaAs-based III-V compound semiconductor heterostructures for in-plane semiconductor lasers
• Abstract--High-index-contrast InAlGaAs/AlGaAs ridge waveguide lasers exhibiting low threshold current and high
• IEEE International Symposium on Compound Semiconductors, Berlin 1999 Self-consistent analysis of high-temperature effects on
• Integrated Photonics Research Conference, Santa Barbara, July 1999 Efficiency Analysis of Quantum Well Lasers using PICS3D
• 376 OPTICS LETTERS / Vol. 23, No. 5 / March 1, 1998 Intraband carrier kinetics and picosecond pulse shaping in
• 627IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 4, NO. 6, JUNE 1992 Refractive Indexes of (Al,Ga, 1n)AsEpilayers
• 242 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 1, JANUARY 2004 Nonlinear Behaviors of Low-Temperature-Grown
• IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 5, NO. 3, MAY/JUNE 1999 643 Cavity Length Effects on Internal
• A racetrack mode-locked silicon evanescent laser Alexander W. Fang, Brian R. Koch, Kian-Giap Gan, Hyundai Park, Richard Jones,
• Physics and Simulation of Optoelectronic Devices IX, Photonics West, San Jose, January 25, 2001 Modeling of traveling-wave amplification photodetectors (TAP detectors)
• 1.55pm ABSORPTION, HIGH SPEED,HIGH SATURATION TEMPERATURE GROWN GaAs
• 1608 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 15, NO. 8, AUGUST 1997 Design of Silicon Hetero-Interface Photodetectors
• 2778 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 14, NO. 12, DECEMBER 1996 Frequency Response of Avalanche Photodetectors
• High temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding
• NUSOD `04 TuC2 4O-Gbh Optical Buffer Design and Simulation
• Power Generator Modules of Segmented Bi2Te3 and ErAs:(InGaAs)1-x(InAlAs)x
• Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles
• SiGe/Si superlattice power generators Gehong Zeng, John E. Bowers
• Influence of Doping Concentration and Ambient Temperature on the Cross-Plane Seebeck Coefficient of InGaAs/InAlAs superlattices
• Cooling Power Density of SiGe/Si Superlattice Micro Refrigerators Gehong Zeng, Xiaofeng Fan, Chris LaBounty, Edward Croke2
• Heterostructure integrated thermionic coolers Ali Shakouria)
• eterostrueture Integrated Thermionic Refrigeration Ali Shakouri,and John E. Bowers
• Physics and Simulation of Optoelectronic Devices VIII, ed. R. Binder, P. Blood & M. Osinski, SPIE Proc. 3944, 2000. Simulation and Optimization of 420 nm InGaN/GaN Laser Diodes
• IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 4, NO. 3, MAY/JUNE 1998 505 Cleaved and Etched Facet Nitride Laser Diodes
• Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence
• Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates
• Optical investigations of the dynamic behavior of GaSb/GaAs quantum C.-K. Sun,a)
• High speed hybrid silicon evanescent electroabsorption modulator
• ErAs:,,InGaAs...1-x,,InAlAs...x alloy power generator modules Gehong Zeng,a
• Cross-plane Seebeck coefficient of ErAs:InGaAs/InGaAlAs superlattices Gehong Zenga
• Dynamically reconfigurable optical packet switch (DROPS)
• 2nd International Symposium on Instrumentation Science and Technology Aug. 18~22, 2002, Jinan. China An Optical Characteristic Testing System for the Infrared Fiber
• INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF OPTICS A: PURE AND APPLIED OPTICS J. Opt. A: Pure Appl. Opt. 8 (2006) S352S359 doi:10.1088/1464-4258/8/7/S10
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 1, JANUARY 1, 2006 175 Enhanced Thermal Stability of Electrooptic Polymer
• Sensors and Actuators A 122 (2005) 915 A thermal bimorph micromirror with large bi-directional
• 2. Galopeau, P. H. M., Zarka, P. & Le Queau, D. Source location of Saturn's kilometric radiation: The Kelvin-Helmholtz instability hypothesis. J. Geophys. Res. 100, 2639726410 (1995).
• 458 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 38, NO. 5, MAY 2002 Locked Multichannel Generation and Management
• Wafer bonded 1.55 m vertical-cavity lasers with continuous-wave operation up to 105C
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 6, JUNE 2003 813 Demonstration of Wavelength-Insensitive Biasing
• 2009 International Topical Meeting on Microwave Photonics 14-16, October -Valencia ISBN 978-84-8363-424-0
• High Aspect Ratio CPW Fabricated Using a Micromachining Process Combining DRIE, Thermal
• Three-Tone Characterization of High-Linearity Waveguide Uni-Traveling-Carrier Photodiodes
• Fully Integrated NxN MEMS Wavelength Selective Switch with 100% Colorless Add-Drop Ports
• ))n(VV/n(j in ))n(VV/(j in
• Hybrid Silicon Evanescent Photodetectors Hyundai Park and John E. Bowers
• A 3-D Micromirror Utilizing Inverted-Series-Connected Electrothermal Bimorph Actuators for Piston and Tilt Motion
• IO Gb/s Photocurrent Driven, Widely Tunable ElectroaborptionModulator Based Wavelength Converter
• An Analytical Electrothermal Model of a 1-D Electrothermal MEMS Micromirror
• Low Dispersion Penalty at 10 Gb/s, Over 75 km, Using a Quantum-Well-IntermixedElectroabsorption-
• A novel monolithically integrated widely-tunable wavelength converter based on a SGDBR-SOA-MZ transmitter and integrated photodetector
• 2nd International Symposium on Instrumentation Science and Technology Aug. 18~22, 2002, Jinan. China Stimulation of Violet Lasers to Traditional Chinese Medicine
• Large interband second-order susceptibilities in InxGa1 xN/GaN quantum wells
• Microwave Characteristics of Ge n-i-p waveguide photodetectors on Silicon-on-Insulator Substrate
• 1922 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 18, NO. 18, SEPTEMBER 15, 2006 40-Gb/s Series-Push-Pull MachZehnder Transmitter
• Distributed Feedback and Mode Locked Silicon Evanescent Lasers Alexander W. Fang, Brian R. Koch, Erica Lively, Daniel J. Blumenthal, John E. Bowers
• Experimental and theoretical thermal analysis of a Hybrid Silicon Evanescent Laser
• Vertical and lateral heterogeneous integration Jon Geske,a)
• Thermoelectric power generator module of 1616 Bi2Te3 and 0.6% ErAs:,,InGaAs...1-x,,InAlAs...x segmented elements
• High-Quality 150 mm InP-to-Silicon Epitaxial Transfer for Silicon Photonic Integrated Circuits
• 2526 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 12, DECEMBER 2005 Widely Tunable Bottom-Emitting
• 1438 IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 6, JUNE 2004 First Demonstration of a MEMS Tunable
• 348 / CLEO 2001 / WEDNESDAY AFTERNOON cw15 530 pm
• Orientation-mismatched wafer bonding for polarization control of 1.3 m-wavelength vertical cavity surface
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 17, NO. 10, OCTOBER 2005 2065 Enhanced Performance in Traveling-Wave
• Hindawi Publishing Corporation Advances in Optical Technologies
• Experimental Characterization and Modeling of InP-based Microcoolers Rajeev Singh1
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 14, NO. 3, MARCH 2002 363 High-Speed and High-Power Performances of
• A 40 Gb/s Asynchronous Optical Packet Buffer Based on an SOA Gate Matrix for Contention Resolution
• Appl Phys A DOI 10.1007/s00339-009-5118-1
• JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, VOL. 17, NO. 1, FEBRUARY 2008 213 An Electrothermomechanical Lumped Element
• 111-V Based Heterostructure Integrated Thermionic Coolers Ali Shakouri, Patrick Abraham, Chris LaBounty, and John E. Bowers
• An Optically Pumped Silicon Evanescent Laser Alexander W. Fang, Hyundai Park, Satoshi Kodama*, John E. Bowers
• 20 GHz high performance planar Si/InGaAs p-i-n photodetector B. F. Levine
• ELECTROTHERMAL SCS MICROMIRROR WITH LARGE-VERTICAL-DISPLACEMENT ACTUATION
• Time-Domain Analysis of a Novel Phase-Locked Coherent Optical Demodulator
• An optically pumped silicon evanescent laser operating continuous wave at 60 C
• 58 IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 13, NO. 1, JANUARY/FEBRUARY 2007 High-Speed OTDM and WDM Networks Using
• Traveling-wave Amplification Photodetector (TAP detector) Daniel Lasaosa, Yi-Jen Chiu, Joachim Piprek, John E. Bowers
• Femtosecond Carrier dynamics in InGaN multiple-quantum-well laser diodes under high injection levels
• Monolithic Ge/Si Avalanche Photodiodes Yimin Kanga*
• Hybrid silicon integration R. Jones H. D. Park A. W. Fang J. E. Bowers O. Cohen
• Low Drive Voltage, Negative Chirp 40 Gb/s EA-Modulator/Widely-Tunable Laser Transmitter, Using
• SiGeC Cantilever Micro Cooler Gehong Zeng, Ali Shakouri1*
• Silicon Evanescent Amplifiers John E. Bowers, Hyundai Park, Ying-hao Kuo, and Alexander W. Fang
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 15, NO. 2, FEBRUARY 2003 215 Standing-Wave Enhanced Electroabsorption
• JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 26, NO. 1, JANUARY 1, 2008 209 Integrated Coherent Receivers for High-Linearity
• Highly Efficient Vertical Outgassing Channels for Robust, Void-Free, Low-Temperature Direct Wafer Bonding
• All-Optical Payload Envelope Detection for Packets with 40 Gbps Payloads and 10 Gbps Labels
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 21, NO. 13, JULY 1, 2009 833 Dynamic Characterization of Distortion in Hybrid
• (a) p contact p-lnGaAs --p-lnP cladding
• *Corresponding author. Tel.: #1 805 893 3543; fax: #1 805 893 3262; e-mail: stacia@xanadu.ece.ucsb.edu.
• IEEE PHOTONICS TECHNOLOGY LETTERS, VOL. 16, NO. 6, JUNE 2004 1531 2.5-Gb/s Error-Free Wavelength Conversion
• Simplified optoelectronic 3R regenerator using nonlinear electro-optical transformation in an
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