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Pearton, Stephen J. - Department of Materials Science and Engineering, University of Florida
RF Characteristics of Room-Temperature-Deposited, Small Gate Dimension Indium Zinc Oxide TFTs
ADVANCED PLASMA-ETCHING PROCESSES FOR DIELECTRIC MATERIALS IN VLSI TECHNOLOGY
ADVANCED PROCESSING OF GaN FOR NOVEL ELECTRONIC DEVICES XIAN-AN CAO
YUN DANIEL PARK PH.D. DISSERTATION
DEVELOPMENT OF HIGH TEMPERATURE STABLE OHMIC AND SCHOTTKY CONTACTS TO N GAN
PROCESS DEVELOPMENT FOR ZnO-BASED DEVICES KELLY PUI SZE IP
CO-IMPLANTATION AND DRY-ETCH DAMAGE RECOVERY BY PLASMA NITRIDATION IN GaN
A NEW FAILURE MECHANISM BY SCANNING ELECTRON MICROSCOPE INDUCED ELECTRICAL BREAKDOWN OF TUNGSTEN WINDOWS IN
EVALUATION OF RAPID THERMAL PROCESSING SYSTEMS AND THEIR ROLE IN FABRICATION OF NEXT GENERATION CORE CMOS FABRICATION
EXPERIMENTAL 3.1. The Scanning Electron Microscopes
SELECTIVE ETCHING OF COMPOUND SEMICONDUCTORS DAVID C. HAYS
