- Thermal stability of a Ti-Si-N diffusion barrier in contact with a Ti adhesion layer for Au metallization
- Role of Planar Defects in Compound Semiconductor Crystals: From Growth of Nanomasts & Nanosails to Processing Light Emission in DualBeam FIB/SEM.
- Yellow luminescence and Fermi level pinning in GaN layers I. Shalish, L. Kronik, G. Segal, and Yoram Shapiraa)
- Ballistic hole emission luminescence Ian Appelbaum,a)
- Observations of conduction-band structure of 4H-and 6H-SiC I. Shalish, I. B. Altfeder, and V. Narayanamurti
- IEEE ELECTRON DEVICE LETTERS, VOL. 21, NO. 12, DECEMBER 2000 581 Thermal Stability of Re Schottky Contacts to 6HSiC
- Proceedings of the Microscopy and Microanalysis 2005 meeting, Honolulu, Hawaii, July 2005 Imaging Defects in Nanometer-scale Semiconductor Crystals
- STABILITY OF SCHOTTKY CONTACTS WITH TA-SI-N AMORPHOUS DIFFUSION BARRIERS AND AU OVERLAYERS ON 6H-SiC
- DIFFERENCES BETWEEN SOLID-STATE REACTION OF PT THIN FILM DEPOSITED ON C-AND ON SI-FACE OF 6H-SIC
- Surface states and surface oxide in GaN layers I. Shalisha)
- Effect of Van Hove singularities on the photovoltage spectra of semiconductors Ilan Shalish
- Hall photovoltage deep-level spectroscopy of GaN films I. Shalish*
- Photoinduced charge carriers at surfaces and interfaces of poly 2-methoxy-5-,,2 -ethyl-hexyloxy...-1,4-phenylenevinylene with Au and GaAs
- Thermal stability of Pt Schottky contacts to 4HSiC I. Shalisha)
- Yellow luminescence and related deep levels in unintentionally doped GaN films I. Shalish, L. Kronik, G. Segal, Y. Rosenwaks, and Yoram Shapira
- Size-dependent surface luminescence in ZnO nanowires Ilan Shalish,1
- Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting
- Grain-boundary-controlled transport in GaN layers I. Shalish, L. Kronik, G. Segal, and Yoram Shapira
- Stability of Schottky contacts with TaSiN amorphous diffusion barriers and Au overlayers on 6HSiC
- IOP PUBLISHING NANOTECHNOLOGY Nanotechnology 22 (2011) 435705 (6pp) doi:10.1088/0957-4484/22/43/435705
