- Band offsets measured by internal photoemission-induced second-harmonic generation Z. Marka, R. Pasternak, S. N. Rashkeev, Y. Jiang, S. T. Pantelides, and N. H. Tolk
- Transition metal atoms on different alumina phases: The role of subsurface sites on catalytic activity
- Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2
- Characterization and modeling of the nitrogen passivation of interface traps in SiO24HSiC
- The Role of the Nanoscale in Surface Reactions: CO2 on CdSe L. G. Wang,1,* S. J. Pennycook,1,2
- Transport in molecular transistors: Symmetry effects and nonlinearities S. N. Rashkeev,1
- VOLUME 87, NUMBER 16 P H Y S I C A L R E V I E W L E T T E R S 15 OCTOBER 2001 Defect Generation by Hydrogen at the Si-SiO2 Interface
- VOLUME 86, NUMBER 26 P H Y S I C A L R E V I E W L E T T E R S 25 JUNE 2001 Atomic-Scale Dynamics of the Formation and Dissolution of Carbon Clusters in SiO2
- Hydrogen passivation and activation of oxygen complexes in silicon S. N. Rashkeev,a)
- VOLUME 85, NUMBER 10 P H Y S I C A L R E V I E W L E T T E R S 4 SEPTEMBER 2000 Excitonic Effects in Core-Excitation Spectra of Semiconductors
- VOLUME 84, NUMBER 20 P H Y S I C A L R E V I E W L E T T E R S 15 MAY 2000 Atomic Arrangement of Iodine Atoms inside Single-Walled Carbon Nanotubes
- Effects of anneals in ammonia on the interface trap density near the band edges in 4Hsilicon carbide metal-oxide-semiconductor capacitors
- Island Shape Selection in Pt(111) Submonolayer Homoepitaxy with or without CO as an Adsorbate
- Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide
- VOLUME 84, NUMBER 5 P H Y S I C A L R E V I E W L E T T E R S 31 JANUARY 2000 Bonding Arrangements at the Si-SiO2 and SiC-SiO2 Interfaces and a Possible Origin
- Structure, Properties, and Dynamics of Oxygen Vacancies in Amorphous SiO2 Zhong-Yi Lu,1
- VOLUME 84, NUMBER 5 P H Y S I C A L R E V I E W L E T T E R S 31 JANUARY 2000 First-Principles Calculation of Transport Properties of a Molecular Device
- Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation
- VOLUME 88, NUMBER 16 P H Y S I C A L R E V I E W L E T T E R S 22 APRIL 2002 Diffusion Mechanism of Hydrogen in Amorphous Silicon
- VOLUME 88, NUMBER 5 P H Y S I C A L R E V I E W L E T T E R S 4 FEBRUARY 2002 Reactions and Diffusion of Water and Oxygen Molecules in Amorphous SiO2
- FowlerNordheim hole tunneling in p-SiCSiO2 structures R. K. Chanana,a)
- Atomic Scale Mechanism of the Transformation of -Alumina to -Alumina Shu-Hui Cai,1,2
- VOLUME 86, NUMBER 18 P H Y S I C A L R E V I E W L E T T E R S 30 APRIL 2001 Nonstoichiometry and the Electrical Activity of Grain Boundaries in SrTiO3
- VOLUME 86, NUMBER 2 P H Y S I C A L R E V I E W L E T T E R S 8 JANUARY 2001 Temperature Effects on the Transport Properties of Molecules
- The benzene molecule as a molecular resonant-tunneling transistor M. Di Ventraa)
- VOLUME 88, NUMBER 4 P H Y S I C A L R E V I E W L E T T E R S 28 JANUARY 2002 Current-Induced Forces in Molecular Wires
- VOLUME 86, NUMBER 25 P H Y S I C A L R E V I E W L E T T E R S 18 JUNE 2001 Control of Doping by Impurity Chemical Potentials: Predictions for p-Type ZnO
