- Atomistic simulations of solid-phase epitaxial growth in silicon Noam Bernstein* and Michael J. Aziz
- mja128.pdf 1 ON KINETICALLY VS. ENERGETICALLY DRIVEN GROWTH INSTABILITIES
- Ferromagnetic Ga1xMnxAs produced by ion implantation and pulsed-laser melting
- Time-resolved temperature measurements during rapid solidification of Si=As alloys induced by pulsed-laser melting
- Activation volume for boron diffusion in silicon and implications for strained films
- Journal of Applied Physics, in press (2011) Magnetic Properties of Ion Implanted Ge1-xMnx Thin Films Solidified
- LOW-TEMPERATURE Si (111) HOMOEPITAXY AND DOPING MEDIATED BY A MONOLAYER OF Pb
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 21 (2009) 224010 (8pp) doi:10.1088/0953-8984/21/22/224010
- Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer
- Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by Pulsed Laser Deposition and Molecular Beam Epitaxy
- Experimental constraints on nonequilibrium interface kinetic models Michael J. Aziz
- Special issue on "Ten Years of Diffusion in Silicon", Defect and Diffusion Forum 153-155, 1-10 (1998).
- Amorphous-crystal interface in silicon: A tight-binding simulation N. Bernstein and M. J. Aziz
- Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE
- Mass Redistribution Causes the Structural Richness of Ion-Irradiated Surfaces Charbel S. Madi,1
- Activation volume for phosphorus diffusion in silicon and Si0.93Ge0.07 Yuechao Zhao and Michael J. Aziza
- Defect and Diffusion Forum 143-147, 1041 (1997) Page 1 Effect of Pressure on Arsenic Diffusion in Germanium: Evidence Against
- Synthesis of GaNxAs1x thin films by pulsed laser melting and rapid thermal annealing of N
- Synthesis of Nearly Monodisperse Embedded Nanoparticles by Separating
- ELSEVIER Journal of CrystalGrowth 148(1995)172-182 ........ CRYSTAL
- DOI: 10.1007/s00339-004-2573-6 Appl. Phys. A 79, 713716 (2004)
- Enhanced nitrogen incorporation by pulsed laser annealing of GaNxAs1x formed by N ion implantation
- Morphological instability of growth fronts due to stress-induced mobility variations
- Focused ion beam induced deflections of freestanding thin films and P. Chenb
- Mechanical Properties of Ordered and Disordered Ni3Al Films 2/2/01 3:18 PM page 1 Comparison of Mechanical Properties of Ni3Al Thin Films
- Model for Dopant and Impurity Segregation During Vapor Phase Growth Craig B. Arnold and Michael J. Aziz MRS Symp. Proc. 648,
- 424 MRS BULLETIN VOLUME 32 MAY 2007 www/mrs.org/bulletin Fundamentals of
- On the stabilization of ion sputtered surfaces Benny Davidovitch,1,2 Michael J. Aziz,1 and Michael P. Brenner1
- Energy Procedia 00 (2010) 000000 www.elsevier.com/locate/XXX
- INSTITUTE OF PHYSICS PUBLISHING MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING Modelling Simul. Mater. Sci. Eng. 9 (2001) 309325 www.iop.org/Journals/ms PII: S0965-0393(01)24726-3
- Composition dependence of Schottky barrier heights and bandgap energies of GaNxAs1-x synthesized by ion implantation and pulsed-laser
- letters to nature 166 NATURE |VOL 412 |12 JULY 2001 |www.nature.com
- Electricity Storage For Intermittent Renewable Sources Jason Rugolo, Michael J. Aziz
- Materials Research Society Symposium Proceedings 1311, GG10.9 (2010) submitted 12/14/2010 Alloy Oxide Electrocatalysts for Regenerative Hydrogen-Halogen Fuel Cell
- Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
- On the temperature dependence of point-defect-mediated luminescence Daniel Recht, Federico Capasso, and Michael J. Aziza
- Appl Phys A (2010) 98: 589594 DOI 10.1007/s00339-009-5462-1
- submitted to Journal of Materials Science revised June 19, 2009 Synthesis and Variable Temperature Electrical Conductivity Studies of
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 21 (2009) 224017 (11pp) doi:10.1088/0953-8984/21/22/224017
- Energy Procedia 00 (2008) 000000 www.elsevier.com/locate/XXX
- Multiple Bifurcation Types and the Linear Dynamics of Ion Sputtered Surfaces Charbel S. Madi,1
- Submitted to Phys. Rev. B 4/1/07 Kinetic energy induced smoothening and delay of epitaxial breakdown in pulsed
- Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy
- Ion Beam Science: Solved and Unsolved Problems
- Submitted to Journal of Vacuum Science & Technology A June 5, 2006 On the Phase Shift of Reflection High Energy Electron Diffraction Intensity
- Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur
- Quantifying the order of spontaneous ripple patterns on ion-irradiated Si(111) H. Bola George1
- Shocks in Ion Sputtering Sharpen Steep Surface Features
- One and Two-Dimensional Pattern Formation on Ion Sputtered Silicon Ari-David Brown1,2
- Continuum approach to self-similarity and scaling in morphological relaxation of a crystal with a facet
- to appear in Solidification Processes and Microstructures : a Symposium in Honor to Wiflried Kurz Eds. M. Rappaz et al. (TMS, Warrendale, PA), in press (2004)
- Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon
- Spontaneous Pattern Formation from Focused and Unfocused Ion Beam Irradiation Alexandre Cuenat and Michael J. Aziz
- Time-resolved measurements of stress effects on solid-phase epitaxy of intrinsic and doped Si
- Stoichiometry Issues in Pulsed Laser Deposition of Alloys Grown from Multicomponent Targets Craig B. Arnold*
- Invited review for Materials Science in Semiconductor Processing 8/16/99 Stress Effects on Defects and Dopant Diffusion in Si
- Self-diffusivity of liquid silicon measured by pulsed laser melting P. G. Sanders and M. J. Aziza)
- VOLUME 84, NUMBER 25 P H Y S I C A L R E V I E W L E T T E R S 19 JUNE 2000 Nonclassical Smoothening of Nanoscale Surface Corrugations
- Introduction The corrosion properties of alloys are of enormous practical importance: modern life would be very different without stainless steels. Alloy
- Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si,,001...
- Activation volume for antimony diffusion in silicon and implications for strained films
- in Selected Works of J.W. Cahn, eds. W.C. Johnson and W.C. Carter (TMS, 1998), pp. 207-9 Introduction to "The Molecular Mechanism of Solidification", by J.W. Cahn,
- Pressure measurement at high temperature using ten Sm:YAG fluorescence peaks
- Nature 390, 596 (1997) Vanishing Atomic Migration Barrier in SiO2
- SURFACE RELAXATION MECHANISMS IN THE MORPHOLOGICAL EQUILIBRATION OF CRYSTAL SURFACES
- MRS Proceedings, 1996 ION-SPUTTER INDUCED RIPPLING OF Si(111)
- Stability of Carbon Nitride Materials at High Pressure and Temperature
- Activation volume for arsenic diffusion in germanium Salman Mithaa)
- Morphological Equilibration of Rippled and Dimpled Crystal Surfaces: The Role of Terrace-Width Fluctuations
- Restricted applicability of Onsager's reciprocity relations to models of interface motion
- Journal of Applied Physics 70, 5323 (15 November 1991). Pressure-Enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications
- Downloaded 22 Jul 2003 to 128.103.60.225. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo/japcr.jsp Downloaded 22 Jul 2003 to 128.103.60.225. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo
- Downloaded 22 Jul 2003 to 128.103.60.225. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo/japcr.jsp Downloaded 22 Jul 2003 to 128.103.60.225. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/japo
- Acta metall. Vol. 36, No. 8, pp. 2335-234% 1988 0001-6160,88 $3.00+0.00 Printed in Great Britain Pergamon Press plc
- Downloaded 22 Jul 2003 to 128.103.60.225. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/jcpo/jcpcr.jsp Downloaded 22 Jul 2003 to 128.103.60.225. Redistribution subject to AIP license or copyright, see http://ojps.aip.org/jcpo
- Nuclear Instruments and Methods in Physics Research B32 (1988) 11-22 North-Holland. Amsterdam
- Time-resolved temperature measurements during pulsed laser irradiation uslng thin film metal thermometers
- Solute trapping of group 111,IV, and V elements in silicon by an aperiodic stepwise growth mechanism
- Germanium partitioning in silicon during rapid solidification D. P. Bruncoa) and Michael 0. Thompson
- Pressure-enhanced interdiffusion in amorphous Si/Ge multilayers Steven D. Theiss,a)
- Ion-beam synthesis and stability of GaAs nanocrystals in silicon C. W. White, J. D. Budai, J. G. Zhu, and S. P. Withrow
- The following appeared in Appl. Phys. Lett. 69, 2297 (1996) Addendum: "Ion beam synthesis and stability of GaAs nanocrystals in silicon" [Appl.
- Thermodynamics of diffusion under pressure and stress: Relation to point defect mechanisms
- EFFECT OF NON-HYDROSTATIC STRESS ON KINETICS AND INTERFACIAL ROUGHNESS DURING SOLID PHASE EPITAXIAL GROWTH IN SI
- Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs By Pulsed Laser Deposition
- NONHYDROSTATIC STRESS EFFECTS ON BORON DIFFUSION IN SI MICHAEL J. AZIZ
- Experimental test of morphological stability theory for a planar interface during rapid solidification
- VOLUME 81, NUMBER 7 P H Y S I C A L R E V I E W L E T T E R S 17 AUGUST 1998 Kinetically Driven Growth Instability in Stressed Solids
- VOLUME 82, NUMBER 11 P H Y S I C A L R E V I E W L E T T E R S 15 MARCH 1999 Spontaneous Pattern Formation on Ion Bombarded Si(001)
- Invited review for Materials Science in Semiconductor Processing 8/16/99 Stress Effects on Defects and Dopant Diffusion in Si
- THE EFFECTS OF A STRESS-DEPENDENT MOBILITY ON INTERFACIAL STABILITY
- Modeling a Growth Instability in Stressed Boron Doped Silicon , T. Kaplan
- Morphological Evolution of Ag/Mica Films Grown by Pulsed Laser Deposition Jeffrey M. Warrender & Michael J. Aziz
- Spontaneous formation of patterns on sputtered surfaces Eric Chason a,*, Michael J. Aziz b
- Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anisotropy effects
- Grooving of a grain boundary by evaporationcondensation below the roughening transition
- To appear in Selected Works of Mats Hillert Edited by J. Agren et al.(2005) Introduction to "A Treatment of the Solute Drag on Moving Grain Boundaries and Phase
- Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys Michael J. Aziz* and Yuechao Zhao
- PROOF COPY [BY10021] 059708PRB [BY10021]059708PRB
- Warrender & Aziz, Pg. 1 Effect of Deposition Rate on Morphology Evolution of Metal-on-Insulator
- Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting
- Electrochemical Acceleration of Chemical Weathering as an
- Appl Phys A (2008) 93: 579587 DOI 10.1007/s00339-008-4696-7
- Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 21 (2009) 224019 (8pp) doi:10.1088/0953-8984/21/22/224019
- Room-temperature photoresponse of Schottky photodiodes based on GaNxAs1-x synthesized by ion implantation and pulsed-laser melting
- Thermal activation and saturation of ion beam sculpting David P. Hoogerheide,1
- Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
- Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
- mja136.pdf 2/9/2001\12:18 AM Nature 412, 166 (12 July 2001) Nanoscale Ion Beam Sculpting
- Solute Diffusion in Liquid Nickel Measured by Pulsed Ion Beam Melting
- Accepted Manuscript Optimization of large amorphous silicon and silica structures for molecular dy
- Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators
- The energy penalty of post-combustion CO2 capture & storage and its implications for retrofitting the U.S. installed base
- 1 October, 1999 Liquid Titanium Solute Diffusion Measured by Pulsed Ion-Beam Melting
- Continuum description of profile scaling in nanostructure decay Dionisios Margetis,1
- Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge
- ATOMISTIC FEATURES OF THE AMORPHOUS-CRYSTAL INTERFACE IN SILICON
- Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs
- Dopant Diffusion under Pressure and Stress Michael J. Aziz
- Nanopore fabrication in amorphous Si: Viscous flow model and comparison to experiment
- Absence of solute drag in solidification J. A. Kittl and M. J. Aziz
- Acta mater. 48 (2000) 47974811 www.elsevier.com/locate/actamat
- This manuscript version differs slightly from the final published version, Nature 410, 450 (22 March 2001). Evolution of Nanoporosity in Dealloying
- Microscopy of Semiconducting Materials 2003: Proceedings of the 13th International Conference on Microscopy of Semiconducting Materials, Cambridge University, 31 March-3 April 2003,ed. A. G.
- Comparison of morphology evolution of Ge,,001... homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy
- Regenerative Hydrogen Chlorine Fuel Cell Model Jason Rugolo, Brian Huskinson, Michael J. Aziz
- Lateral Templating for Guided Self-Organization of Sputter
- Continuum Theory of Nanostructure Decay Via a Microscale Condition Dionisios Margetis,1,* Pak-Wing Fok,1
- Strain-stabilized solid phase epitaxy of SiGe on Si Jennifer F. Sage, William Barvosa-Carter,a
- EFFECT OF PRESSURE ON BORON DIFFUSION IN SILICON Yuechao Zhao1, Michael J. Aziz1, Salman Mitha2, and David Schiferl3
- Three-dimensional morphology evolution of SiO2 patterned films under MeV ion irradiation
- Dynamics of pattern formation during low-energy ion bombardment of Si(0 0 1)
- HARVARD UNIVERSITY DIVISION OF ENGINEERING AND APPLIED SCIENCES
- Point defect engineered Si sub-bandgap light-emitting diode
- Multiple Scattering, Rather than Stress, Causes the Low EnergyLow Angle Constant Wavelength Bifurcation of Argon Ion
- Insulator-to-Metal Transition in Sulfur-Doped Silicon Mark T. Winkler,1
- Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes
- Accepted Manuscript Title: Multiple Scattering Causes the Low EnergyLow Angle
- Magnetic properties of ion implanted Ge12xMnx thin films solidified through pulsed laser melting
- Model of Performance of a Regenerative Hydrogen Chlorine Fuel Cell for Grid-Scale Electrical Energy Storage
- Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur
- Strong midinfrared optical absorption by supersaturated sulfur doping in I. Umezu, A. Kohno, J. M. Warrender, Y. Takatori, Y. Hirao et al.
- PHYSICAL REVIEW B 84, 214108 (2011) Time-resolved measurements of nanoscale surface pattern formation kinetics in two dimensions
- Insulator-to-Metal Transition in Selenium-Hyperdoped Silicon: Observation and Origin Elif Ertekin,1,* Mark T. Winkler,2,
- Photocarrier Excitation and Transport in Hyperdoped Planar Silicon Devices.
