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- Strain relaxation in graded InGaNGaN epilayers grown on sapphire T. L. Song, S. J. Chua,a),b)
- Catalyst proximity effects on the growth rate of Si nanowires S. T. Boles,1,a
- Electrochemically controlled transport of lithium through ultrathin SiO2 Nava Ariel,a
- Yellow-green emission for ETS-LEDs and lasers based on a strainedInGaP quantum well heterostructure grown on a transparent, compositionally graded AlInGaP buffer
- Materials Science and Engineering B67 (1999) 5361 Dislocation dynamics in relaxed graded composition
- Strained Sistrained Ge dual-channel heterostructures on relaxed Si0.5Ge0.5 for symmetric mobility p-type and n-type metal-oxide-semiconductor
- Growth of highly tensile-strained Ge on relaxed InxGa1-xAs by metal-organic chemical vapor deposition
- HIGH QUALITY GERMANIUM PHOTODIODES ON SILICON SUBSTRATES USING AN INTERMEDIATE CHEMICAL MECHANICAL POLISHING STEP
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- Alternative slip system activation in lattice-mismatched InP/InGaAs interfaces
- Very high mobility two-dimensional hole gas in Si/Ge$i,-JGe structures grown by molecular beam epitaxy
- Preparation of Novel SiGe-Free Strained Si on Insulator Substrates T. A. Langdo, A. Lochtefeld, M. T. Currie, R. Hammond, V. K. Yang, J. A. Carlin, C. J. Vineis,
- Materials Science and Engineering B 124125 (2005) 102106 Improved thermal stability and hole mobilities in a
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- APPLIED PHYSICS REVIEWS--FOCUSED REVIEW Strained Si, SiGe, and Ge channels for high-mobility
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- Thermal Considerations for Advanced SOI Substrates Designed for III-V/Si Heterointegration
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- Ultrathin Strained Si-on-Insulator and SiGe-on-Insulator Created using Low Temperature Wafer Bonding
- Novel dislocation structure and surface morphology effects in relaxed Ge/Si-Ge(graded)/Si structures
- Thermal reaction of nickel and Si0.75Ge0.25 alloy K. L. Peya)
- Comparison of arsenic and phosphorus diffusion behavior in silicongermanium alloys
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- Metal-organic chemical vapor deposition of single domain GaAs on GeGexSi1x Si and Ge substrates
- Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy
- Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing
- European PVSECE Glasgow, Scotland 2000 III-V SPACE SOLAR CELLS ON Si SUBSTRATES USING GRADED GeSi BUFFERS
- phys. stat. sol. (a) 171, 227 (1999) Subject classification: 68.55.Ln; 61.72.Lk; S5.11; S7.12
- Free-standing AlxGa1-xAs heterostructures by gas-phase etching of germanium
- High Quality Epitaxial Growth of GaAsyP1-y Alloys on Si1-xGex Virtual P. Sharma, M. T. Bulsara, and E. A. Fitzgerald
- Self-cleaning and surface recovery with arsine pretreatment in ex situ atomic-layer-deposition of Al2O3 on GaAs
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 22 (2007) 2934 doi:10.1088/0268-1242/22/2/006
- Microelectronically fabricated LiCoO2/SiO2/polycrystalline-silicon power cells planarized by chemical mechanical polishing
- Challenges in epitaxial growth of SiGe buffers on Si (111), (110), and (112) Minjoo L. Lee a,b,*, Dimitri A. Antoniadis a
- Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
- Yellow-green strained-InGaP quantum-well epitaxial-transparent-substrate light emitting diodes
- Growth of strained Si and strained Ge heterostructures on relaxed Si1xGex by ultrahigh vacuum chemical vapor deposition
- Nanostructure and infrared photoluminescence of nanocrystalline Ge formed by reduction of Si0.75Ge0.25O2 Si0.75Ge0.25 using various H2 pressures
- Hole mobility enhancements in nanometer-scale strained-silicon heterostructures grown on Ge-rich relaxed Si1xGex
- Improved room-temperature continuous wave GaAsAlGaAs and InGaAsGaAsAlGaAs lasers fabricated on Si substrates
- Theoretical analysis of Si1xyGexCy near-infrared photodetectors
- 248 IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 4, APRIL 2003 Silicon Devices Influence of High Channel Doping on the
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- Interfacial reactions of Ni on Si1xGex ,,x0.2, 0.3... at low temperature by rapid thermal annealing
- Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metalinsulator
- IEEE ELECTRON DEVICE LETTERS, VOL. 22, NO. 7, JULY 2001 321 Electron Mobility Enhancement in Strained-Si
- N2O oxidation of strained-Si/relaxed-SiGe heterostructure grown by UHVCVD
- Hole mobility enhancements in strained SiSi1yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed
- Carrier mobilities and process stability of strained Si n-and p-MOSFETs on SiGe virtual substrates
- Alternatives to thick MBE-grown relaxed SiGe buffers T. Hackbartha,*, H.-J. Herzoga
- Evolution of microstructure and dislocation dynamics in InxGa1 xP graded buffers grown on GaP by metalorganic vapor phase
- Reprinted from JEM, Vol. 27 No. 7, July 1998, pp. 900907. Portable Document Format (.pdf) Reproduction
- Totally relaxed Ge$i, --x layers with low threading dislocation densities grown on Si substrates
- SiGe-On-Insulator (SGOI): Two Structures for CMOS Application
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- Channel Engineering of SiGe-Based Heterostructures for High Mobility MOSFETs Christopher W. Leitz, Matthew T. Currie, Minjoo L. Lee, Zhi-Yuan Cheng, Dimitri. A.
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- In situ metal-organic chemical vapor deposition atomic-layer deposition of aluminum oxide on GaAs using trimethyaluminum
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- SiGe-free strained Si on insulator by wafer bonding and layer transfer T. A. Langdo,a)
- INTRODUCTION The combination of the advantages of silicon-on-
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- 460 IEEE ELECTRON DEVICE LETTERS, VOL. 24, NO. 7, JULY 2003 Implementation of Both High-Hole and Electron
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- Coplanar Integration of Lattice-Mismatched Semiconductors with Silicon by Wafer Bonding GeSi1xGex Si
- Ge/III-V Heterostructures and Their Applications in Fabricating Engineered Y. Bai and E. A. Fitzgerald
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- Comparison of luminescent efficiency of InGaAs quantum well structures grown on Si, GaAs, Ge, and SiGe virtual substrate
- Ge MOS Characteristics with CVD HfO2 Gate Dielectrics and TaN Gate Electrode W. P. Bai*, N. Lu*, J. Liu*, A. Ramirez**, D. L. Kwong*, D. Wristers**, A. Ritenour#
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- Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers
- Dislocation glide and blocking kinetics in compositionally graded SiGeSi C. W. Leitz,a)
- A.Y. Kim and E.A. Fitzgerald, MRS Symposia Proceedings 510 (1998) Page 1 ENGINEERING DISLOCATION DYNAMICS IN Inx(AlyGa1-y)1-xP GRADED BUFFERS
- Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single-and dual-channel
- INSTITUTE OF PHYSICS PUBLISHING SEMICONDUCTOR SCIENCE AND TECHNOLOGY Semicond. Sci. Technol. 19 (2004) L48L51 PII: S0268-1242(04)72643-7
- Reprinted from JEM, Vol. 27 No. 9, September 1998, pp. 10101016. Portable Document Format (.pdf) Reproduction
- Relaxed, high-quality InP on GaAs by using InGaAs and InGaP graded buffers to avoid phase separation
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- Journal of The Electrochemical Society, 159 (2) H183-H190 (2012) H183 0013-4651/2012/159(2)/H183/8/$28.00 The Electrochemical Society
