- Thermodynamic processes of Si-interstitial clusters Jeongnim Kim,1
- Diffusion mechanisms for silicon di-interstitials Yaojun A. Du,* Richard G. Hennig, and John W. Wilkins
- Supplementary information A list of supplementary information for the manuscript titled "A topological point defect
- Comparison of screened hybrid density functional theory to diffusion Monte Carlo in calculations of total energies of silicon phases and defects
- Coherent electronhole correlations in quantum dots Lars Jonsson,a)
- Fast diffusion mechanism of silicon tri-interstitial defects Yaojun A. Du,1 Stephen A. Barr,2 Kaden R. A. Hazzard,3 Thomas J. Lenosky,1 Richard G. Hennig,1 and John W. Wilkins1
- Spin-dependent phenomena in digital-magnetic heterostructures: Clustering and phase-space filling effects
- VOLUME 85, NUMBER 5 P H Y S I C A L R E V I E W L E T T E R S 31 JULY 2000 Bloch Oscillations in the Presence of Plasmons and Phonons
- Supporting Information Driver et al. 10.1073/pnas.0912130107
- Physica E 7 (2000) 279284 www.elsevier.nl/locate/physe
- New Mechanism for the to ! Martensitic Transformation in Pure Titanium D. R. Trinkle,1,2
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- Splitting of the excitonic peak in quantum wells with interfacial roughness Herve Castella
- Accelerated dynamics simulations of interstitial-cluster growth Stefan Birnera,b
- Feature Mining Paradigms for Scientific Data Tat-Sang Choy
- A topological point defect regulates the evolution of extended defects in irradiated silicon
- Electron-electron relaxation in heterostructures Michael Reizer and John W. Wilkins
- Systematic pathway generation and sorting in martensitic transformations: Titanium to D. R. Trinkle,1,2 D. M. Hatch,3 H. T. Stokes,3 R. G. Hennig,2 and R. C. Albers4
- nature materials | VOL 4 | FEBRUARY 2005 | www.nature.com/naturematerials 129 Impurities block the to martensitic
- Eur. Phys. J. B 57, 229234 (2007) DOI: 10.1140/epjb/e2007-00176-5 THE EUROPEAN
- Complexity of Small Silicon Self-Interstitial Defects D. A. Richie
- Calculated second-harmonic susceptibilities of BN, AlN, and GaN Jian Chen,a)
- Accurate ab initio predictions of IIIV direct-indirect band gap crossovers Jeremy W. Nicklasa
- Electron-hole correlations in semiconductor quantum dots with tight-binding wave functions Seungwon Lee, Lars Jonsson, and John W. Wilkins
- Extended Si ^311 defects Jeongnim Kim* and John W. Wilkins
- Many-body levels of optically excited and multiply charged InAs nanocrystals modeled by semiempirical tight binding
- Band offsets of semiconductor heterostructures: A hybrid density functional study
- Supplementary information A list of supplementary information, which may help readers to understand the manuscript
- Supplementary information A list of supplementary information, which may help readers to understand the manuscript
- Phase transformation in Si from semiconducting diamond to metallic -Sn phase in QMC and DFT under hydrostatic and anisotropic stress
- Quantum Monte Carlo computations of phase stability, equations of state, and elasticity
- Force-matched embedded-atom method potential for niobium Michael R. Fellinger,* Hyoungki Park, and John W. Wilkins
- Classical potential describes martensitic phase transformations between the , , and titanium phases
- Empirical tight-binding model for titanium phase transformations D. R. Trinkle,1,2 M. D. Jones,3,2 R. G. Hennig,4 S. P. Rudin,2 R. C. Albers,2 and J. W. Wilkins4
- Quasiparticle calculations of band offsets at AlNGaN interfaces Daniel Cociorva*, Wilfried G. Aulbur, John W. Wilkins
- Far-infrared-driven electron-hole correlations in a quantum dot with an internal tunneling barrier Roger Sakhel, Lars Jonsson, and John W. Wilkins
- Early-stage relaxation of hot electrons by LO phonon emission Herve Castella
- Nonlinear THz response of a one-dimensional superlattice Avik W. Ghosh* and John W. Wilkins
- VOLUME 84, NUMBER 3 P H Y S I C A L R E V I E W L E T T E R S 17 JANUARY 2000 Stability of Si-Interstitial Defects: From Point to Extended Defects
- VOLUME 83, NUMBER 10 P H Y S I C A L R E V I E W L E T T E R S 6 SEPTEMBER 1999 Thermally Activated Reorientation of Di-interstitial Defects in Silicon
- Ab initio calculation of binding and diffusion of a Ga adatom on the GaAs ,,001...-c,,4 4... surface J. G. LePage
- Simple bias potential for boosting molecular dynamics with the hyperdynamics scheme M. M. Steiner and P.-A. Genilloud
- VOLUME 79, NUMBER 18 P H Y S I C A L R E V I E W L E T T E R S 3 NOVEMBER 1997 Reflection of THz Radiation by a Superlattice
- Electron-electron scattering in far-infrared quantum cascade lasers Per Hyldgaard* and John W. Wilkins
- VOLUME 76, NUMBER 13 P H Y S I C A L R E V I E W L E T T E R S 25 MARCH 1996 Renormalization of the Drude Conductivity by the Electron-Phonon Interaction
- VOLUME 76, NUMBER 8 P H Y S I C A L R E V I E W L E T T E R S 19 FEBRUARY 1996 Large Local-Field Corrections in Optical Rotatory Power of Quartz and Selenium
- Dynamic Classification of Defect Structures in Molecular Dynamics Simulation Data
- Detection and Visualization of Anomalous Structures in Molecular Dynamics Simulation Data
- PHYSICAL REVIEW B VOLUME 36, NUMBER 3 15 JULY 1987-II Hot-electron noise in two-valley semiconductors: An analytic model
