- 2 -21 Science Highlights Atomistic Observation of Light-inducedVector and Scalar
- Band-tail states and the localized-to-extended transition in amorphous diamond Jianjun Dong and D. A. Drabold
- Observation of light polarization-dependent structural changes in chalcogenide glasses
- IOP PUBLISHING MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING Modelling Simul. Mater. Sci. Eng. 19 (2011) 035010 (9pp) doi:10.1088/0965-0393/19/3/035010
- Local-basis quasiparticle calculations and the dielectric response function of Si clusters Ming Yu, Sergio E. Ulloa, and David A. Drabold
- A LETTERS JOURNAL EXPLORING THE FRONTIERS OF PHYSICS
- VOLUME 88, NUMBER 4 P H Y S I C A L R E V I E W L E T T E R S 28 JANUARY 2002 Electronic Structure of Glassy Chalcogenides As4Se4 and As2Se3
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- Electrons and Phonons in amorphous Si: Deformation Potentials and Solutions of the Time Dependent Schrdinger Equation
- physica status solidi, 19 June 2011 Pentagonal puckering in a sheet of
- Silver transport in GexSe1-x:Ag materials: Ab initio simulation of a solid electrolyte De Nyago Tafen* and D. A. Drabold
- Realistic models of binary glasses from models of tetrahedral amorphous semiconductors De Nyago Tafen and D. A. Drabold
- Advances and Applications in the FIREBALL Ab Initio Tight-Binding Molecular-Dynamics Formalism
- Ab initio molecular-dynamics study of the structural, vibrational, and electronic properties of glassy GeSe 2
- Enhanced radiative transition in SinGem nanoclusters C. S. Jayanthi,1
- Eur. Phys. J. B 77, 723 (2010) DOI: 10.1140/epjb/e2010-00233-0
- Systematic study of electron localization in an amorphous semiconductor Raymond Atta-Fynn,1
- The properties of amorphous GaN B. Cai and D. A. Drabold
- Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency I. Santos,1,2,* P. Castrillo,2 W. Windl,1 D. A. Drabold,3 L. Pelaz,2 and L. A. Marqus2
- Application of local-spin-density approximation to a-Si and tetrahedral a-C P. A. Fedders
- Phys. Status Solidi B 246, No. 8, 18491853 (2009) / DOI 10.1002/pssb.200982016 p s sbasic solid state physics
- VOLUME 85, NUMBER 13 P H Y S I C A L R E V I E W L E T T E R S 25 SEPTEMBER 2000 Direct Calculation of Light-Induced Structural Change and Diffusive Motion in Glassy As2Se3
- Low-temperature anomalous specific heat without tunneling modes: A simulation for a-Si with voids
- Approximate ab initio calculation of vibrational properties of hydrogenated amorphous silicon with inner voids
- Energetics of Large Fullerenes: Balls, Tubes, and Capsules Author(s): Gary B. Adams, Otto F. Sankey, John B. Page, Michael O'Keeffe, David A. Drabold
- Binding and diffusion of a Si adatom around the type A step on Si(001) Materials Research Laboratory and Department of Materials Science and Engineering,
- Gap formation and defect states in tetrahedral amorphous carbon D. A. Drabold
- Structure and energetics of giant fullerenes: An order-N molecular-dynamics study Satoshi Itoh
- Exciton-induced lattice relaxation and the electronic and vibrational spectra of silicon clusters Jakyoung Song
- VOLUME 79, NUMBER 4 P H Y S I C A L R E V I E W L E T T E R S 28 JULY 1997 Can Amorphous GaN Serve as a Useful Electronic Material?
- Ab initio molecular-dynamics study of liquid GeSe2 Mark Cobb and D. A. Drabold
- Defects, doping, and conduction mechanisms in nitrogen-doped tetrahedral amorphous carbon
- Theory of boron doping in a-Si:H P. A. Fedders
- VOLUME 80, NUMBER 9 P H Y S I C A L R E V I E W L E T T E R S 2 MARCH 1998 Atomistic Structure of Band-Tail States in Amorphous Silicon
- Ring formation and the structural and electronic properties of tetrahedral amorphous carbon surfaces
- Letter to the Editor Evidence for valence alternation, and a new structural model of
- Improved accuracy and acceleration of variational order-N electronic-structure computations by projection techniques
- The structure of electronic states in amorphous silicon
- VOLUME 83, NUMBER 24 P H Y S I C A L R E V I E W L E T T E R S 13 DECEMBER 1999 Direct Molecular Dynamic Simulation of Light-Induced Structural Change
- Extended-range computation of Wannier-like functions in amorphous semiconductors Uwe Stephan* and Richard M. Martin
- Computer simulation of low-energy excitations in amorphous silicon with voids
- First-principles molecular-dynamics study of glassy As2Se3 Jun Li and D. A. Drabold
- Band gap engineering in amorphous AlxGa1xN: Experiment and ab initio calculations
- Structural and electronic properties of glassy GeSe2 surfaces Xiaodong Zhang and D. A. Drabold
- Approximate ab initio calculations of electronic structure of amorphous silicon M. Durandurdu, D. A. Drabold, and N. Mousseau
- Ab initio simulation of first-order amorphous-to-amorphous phase transition of silicon Murat Durandurdu
- Structure and physical properties of paracrystalline atomistic models of amorphous silicon
- Realistic models of paracrystalline silicon S. M. Nakhmanson*
- Simulation of pressure-induced polyamorphism in a chalcogenide glass GeSe2 Murat Durandurdu and D. A. Drabold
- VOLUME 88, NUMBER 19 P H Y S I C A L R E V I E W L E T T E R S 13 MAY 2002 Spatial Decay of the Single-Particle Density Matrix in Insulators
- First principles molecular dynamics study of amorphous AlxGa1xN alloys Kuiying Chena)
- Ab initio simulation of high-pressure phases of GaAs Murat Durandurdu and D. A. Drabold
- Spatial decay of the single-particle density matrix in tight-binding metals: Analytic results in two dimensions
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 15 (2003) S1529S1536 PII: S0953-8984(03)54807-X
- Physical properties of a GeS2 glass using approximate ab initio molecular dynamics Sebastien Blaineau and Philippe Jund
- Electron hopping between localized states: A simulation of the finite-temperature Anderson problem using density functional methods
- Reverse Monte Carlo modeling of amorphous silicon Parthapratim Biswas,* Raymond Atta-Fynn,
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 17 (2005) L321L327 doi:10.1088/0953-8984/17/30/L01
- ) 0# 12"&3 ) # ) D. A. Drabold, P. Biswas, D. Tafen, R. Atta-Fynn
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 16 (2004) S5173S5182 PII: S0953-8984(04)85097-5
- Photoinduced changes in the electronic structure of As4Se3 glass K. Antoine a
- 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim phys. stat. sol. (b) 242, No. 7, R55R57 (2005) / DOI 10.1002/pssb.200510023
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- Topics in Applied Physics Topics in Applied Physics is part of the SpringerLink service. For all customers with standing
- Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material: Hydrogenated amorphous silicon
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 19 (2007) 455202 (10pp) doi:10.1088/0953-8984/19/45/455202
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- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 19 (2007) 450301 (1p) doi:10.1088/0953-8984/19/45/450301
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- Eur. Phys. J. B 68, 121 (2009) DOI: 10.1140/epjb/e2009-00080-0 Topics in the theory of amorphous materials
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- Electrical conductivity calculations: Structural disorder and the role of degenerate or resonant electron states
- Physics 3, 25 (2010) The nanostructure problem
- PHYSICAL REVIEW B 83, 045201 (2011) Urbach tails of amorphous silicon
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- PHYSICAL REVIEW B 83, 092202 (2011) Building block modeling technique: Application to ternary chalcogenide glasses
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- arXiv:1103.6051v1[cond-mat.mtrl-sci]30Mar2011 Atomistic Simulations of Flash Memory
- Theoretical Studies of Structure and Doping of Hydrogenated Amorphous Silicon.
- Electronic structure of a realistic model of amorphous graphene
- PHYSICAL REVIEW E 83, 012103 (2011) Comparison of the Kubo formula, the microscopic response method, and the Greenwood formula
- Ab initio simulation of pressure-induced low-energy excitations in amorphous silicon Murat Durandurdu and D. A. Drabold
- Photoinduced changes in the electronic structure of As2Se3 glass
- First-principles studies of hydrogenated Si,,111...-7 7 D. R. Alfonso
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 21 (2009) 084207 (14pp) doi:10.1088/0953-8984/21/8/084207
- Chemical origin of polarization-dependent photoinduced changes in an As36Se64 glass film via in situ synchrotron x-ray photoelectron spectroscopy
- Section 4. Electronic structure Anderson transition and thermal eects on electron states in
- Network structure and dynamics of hydrogenated amorphous silicon D.A. Drabold *, T.A. Abtew, F. Inam, Y. Pan
- Semiquantitative scattering theory of amorphous materials Mingliang Zhang,* Yue Pan, F. Inam, and D. A. Drabold
- Molecular-dynamics investigations of conformational fluctuations and low-energy vibrational excitations in a-Si:H
- Atomic layering at the liquid silicon surface: A first-principles simulation Gabriel Fabricius
- Atomistic Origin of Urbach Tails in Amorphous Silicon Y. Pan, F. Inam, M. Zhang, and D. A. Drabold
- Experimentally constrained molecular relaxation: The case of glassy GeSe2 Parthapratim Biswas,* De Nyago Tafen,
- Studies of silicon dihydride and its potential role in light-induced metastability in hydrogenated amorphous silicon
- INSTITUTE OF PHYSICS PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 16 (2004) S5289S5296 PII: S0953-8984(04)85017-3
- Theoretical study on the nature of band-tail states in amorphous Si P. A. Fedders
- Strain relaxation mechanisms and local structural changes in Si1xGex alloys C. S. Jayanthi,1
- Kernel polynomial method for a nonorthogonal electronic-structure calculation of amorphous diamond
- Atomistic comparison between stoichiometric and nonstoichiometric glasses: The cases of As2Se3 and As4Se4
- Theoretical study of an amorphous chalcogenide surface F. Inam, D.A. Drabold *
- Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxidesemiconductor structures
- Study of light-induced vector changes in the local atomic structure of AsSe glasses by EXAFS
- MAXIMUM ENTROPY IN CONDENSED MATTER THEORY David Drabold and Gerald Jones
- Electrical conductivity and MeyerNeldel rule: The role of localized states in hydrogenated amorphous silicon
- Hidden structure in amorphous solids , James P. Lewis
- 5 (2001) 509516Current Opinion in Solid State and Materials Science Approximate ab initio simulations of amorphous silicon and glassy
- Ab initio models of amorphous InN Department of Physics and Astronomy, Ohio University, Athens, Ohio 45701, USA
- The microscopic response method: Theory of transport for systems with
- Maximum entropy and the problem of moments: A stable algorithm K. Bandyopadhyay and A. K. Bhattacharya*
- Ab initio models of amorphous Si1-xGex:H T. A. Abtew1,
- IOP PUBLISHING JOURNAL OF PHYSICS: CONDENSED MATTER J. Phys.: Condens. Matter 19 (2007) 455206 (10pp) doi:10.1088/0953-8984/19/45/455206
- Electronic consequences of the mutual presence of thermal and structural disorder D. A. Drabold
- Eur. Phys. J. B 17, 667671 (2000) THE EUROPEAN
- Order-N projection method for first-principles computations of electronic quantities and Wannier functions
- Pressure-induced structural phase transition of paracrystalline silicon Murat Durandurdu and D. A. Drabold
- Study of structural changes in amorphous As2Se3 by EXAFS under in situ laser irradiation
- Atomistic Simulation of the Finite-Temperature Anderson Localization Problem
- First-order pressure-induced polyamorphism in germanium Murat Durandurdu and D. A. Drabold
- High-pressure phases of amorphous and crystalline silicon Murat Durandurdu
- Comment on ``Boson peak in amorphous silicon: A numerical study'' S. M. Nakhmanson*
- Models and modeling schemes for binary IV-VI glasses De Nyago Tafen and D. A. Drabold
- PHYSICAL REVIEW B 83, 094202 (2011) Ab initio simulation of solid electrolyte materials in liquid and glassy phases
- J. Phys.: Condens. Matter 8 (1996) 641647. Printed in the UK Structure of diamond(100) stepped surfaces from ab initio
- Electronphonon coupling is large for localized states Raymond Atta-Fynn,* Parthapratim Biswas,
- Alternative Approach to Computing Transport Coefficients: Application to Conductivity and Hall Coefficient of Hydrogenated Amorphous Silicon
- Experimentally constrained molecular relaxation: The case of hydrogenated amorphous silicon Parthapratim Biswas*
- Otto F. Sankey This volume honors Otto F. Sankey, Regents
- Ab-initio Calculation of Structural and Electrical Properties of Amorphous Binay Prasai, Bin Cai, and D. A. Drabold
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- arXiv:submit/0384331[cond-mat.stat-mech]20Dec2011 Approximate Theory of Temperature Coefficient of Resistivity of Amorphous
- myjournal manuscript No. (will be inserted by the editor)
