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Summary: Performance Evaluation of CNFET-Based
Logic Gates
Geunho Cho, Yong-Bin Kim, Fabrizio Lombardi
Department of Electrical and Computer Engineering
Northeastern University
Boston, MA, USA
{gcho, ybk, lombardi}@ece.neu.edu
MinSu Choi
Department of Electrical and Computer Engineering
Missouri University of Science & Technology
Rolla, MO, USA
choim@mst.edu
Abstract-- As the physical gate length of current devices is
reduced to below 65 nm, effects (such as large parametric
variations and increase in leakage current) have caused the I-V
characteristics to be substantially depart from those commonly
associated with traditional MOSFETs, thus impeding the efficient
development and manufacturing of devices at deep sub-
micro/nano scales. Carbon Nanotube Field Effect Transistors
(CNFETs) have received widespread attention, as one of the
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