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2100 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 9, SEPTEMBER 2007 Multidimensional Modeling of Nanotransistors
 

Summary: 2100 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 9, SEPTEMBER 2007
Multidimensional Modeling of Nanotransistors
M. P. Anantram and A. Svizhenko
(Invited Paper)
Abstract--In this paper, we review our recent work using the
nonequilibrium Green's function method to model nanotransis-
tors. After presenting a motivation for the need of quantum
mechanical modeling, an account of the equations and imple-
mentation is given for both 1-D and 2-D modeling. Examples
are given to highlight the use of the developed models. Finally,
possible future directions in quantum mechanical modeling of
transport in nanotransistors are highlighted along with computa-
tional challenges.
Index Terms--Algorithm, computational electronics, contact
resistance, gate leakage, Green's function, modeling, MOSFETs,
nanoelectronics, nanomaterials, nanotechnology, non equilibrium
quantum transport, parallel processing, phonons, quantum ef-
fects, quantum theory, review, scattering, semiconductors, silicon,
simulator, software.
I. INTRODUCTION

  

Source: Anantram, M. P. - Department of Electrical Engineering, University of Washington at Seattle

 

Collections: Materials Science; Computer Technologies and Information Sciences