Summary: Thin Solid Films 455­456 (2004) 684­687
0040-6090/04/$ - see front matter 2004 Elsevier B.V. All rights reserved.
doi:10.1016/j.tsf.2004.01.036
In-situ growth monitoring by spectroscopy ellipsometry of MOCVD
cubic-GaN(001)
A. Montaigne Ramil *, K. Schmidegg , A. Bonanni , H. Sitter , D. Stifter , Li Shunfeng , D.J. As ,a, a a a b c c
K. Lischkac
Institute of Semiconductor Physics and Solid State Physics, Johannes Kepler University, Linz, Austriaa
Upper Austrian Research GmbH, Linz, Austriab
Faculty of Science, University of Paderborn, Paderborn, Germanyc
Abstract
In-situ and on-line spectroscopic ellipsometry has been carried out during the metal­organic chemical vapor deposition of cubic
GaN on GaNyGaAs(001) templates fabricated via molecular beam epitaxy. The optical response at growth temperature and the
different growth stages have been monitored and the real and imaginary part of the pseudo-dielectric function has been computed
by means of the two-phase (ambient-bulk substrate) model. Kinetic ellipsometry measurements acquired, respectively, under and
above the energy gap of the deposited material are discussed.
2004 Elsevier B.V. All rights reserved.
Keywords: Ellipsometry; Metalorganic chemical vapor deposition; Cubic GaN; On-line monitoring
1. Introduction
III-nitride compounds, AlN, GaN, InN and their alloys

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics