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Giant magnetoresistance in half metallic Fe3O4 based spin valve structures D. Tripathy and A. O. Adeyeyea
 

Summary: Giant magnetoresistance in half metallic Fe3O4 based spin valve structures
D. Tripathy and A. O. Adeyeyea
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National
University of Singapore, Singapore 117576, Singapore
Presented on 9 January 2007; received 12 October 2006; accepted 1 December 2006;
published online 12 April 2007
A systematic study of the magnetic and in-plane magnetotransport properties of Fe3O4/Cu/Ni80Fe20
spin valve structures is presented. We observed that the spin valve structure is highly sensitive to the
thickness of the Cu spacer layer tCu. For tCu=2 nm, the structure exhibits a clear anisotropic
magnetoresistance at low magnetic fields but no giant magnetoresistance GMR effect due to strong
exchange coupling between the Fe3O4 and Ni80Fe20 layers. In contrast, a positive GMR effect is
measured for tCu 5 nm due to separate magnetization switching of the Fe3O4 and Ni80Fe20 layers.
We have also investigated that the temperature dependence of the GMR effect observed marked
changes at low temperatures. 2007 American Institute of Physics. DOI: 10.1063/1.2710236
Highly spin-polarized ferromagnetic oxides have been
the focus of recent fundamental and technological studies in
the field of spin electronics. These materials have tremen-
dous potential for application in devices based on spin-
dependent phenomenon such as giant magnetoresistance1
GMR and tunneling magnetoresistance TMR ,2

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science