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Appl Phys A (2008) 93: 579587 DOI 10.1007/s00339-008-4696-7
 

Summary: Appl Phys A (2008) 93: 579587
DOI 10.1007/s00339-008-4696-7
Film growth mechanisms in pulsed laser deposition
Michael J. Aziz
Received: 12 October 2007 / Accepted: 9 April 2008 / Published online: 13 June 2008
Springer-Verlag 2008
Abstract This paper reviews our recent studies of the fun-
damentals of growth morphology evolution in Pulsed Laser
Deposition in two prototypical growth modes: metal-on-
insulator island growth and semiconductor homoepitaxy. By
comparing morphology evolution for pulsed laser deposi-
tion and thermal deposition in the same dual-use chamber
under identical thermal, background, and surface prepara-
tion conditions, and varying the kinetic energy by varying
the laser fluence or using an inert background gas, we have
isolated the effect of kinetic energy from that of flux pulsing
in determining the differences between morphology evolu-
tion in these growth methods. In each growth mode analyti-
cal growth models and Kinetic Monte Carlo simulations for
thermal deposition, modified to include kinetic energy ef-

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science