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Multiple relaxation mechanisms in SrTiO3 SrRuO3 heterostructures Z.-G. Ban and S. P. Alpaya)

Summary: Multiple relaxation mechanisms in SrTiO3 ÕSrRuO3 heterostructures
Z.-G. Ban and S. P. Alpaya)
Department of Metallurgy and Materials Engineering and Institute of Materials Science,
University of Connecticut, Storrs, Connecticut 06269
Feizhou He and B. O. Wells
Department of Physics, University of Connecticut, Storrs, Connecticut 06269
X. X. Xi
Department of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802
Received 24 November 2003; accepted 16 April 2004; published online 25 May 2004
We have studied stress relaxation mechanisms in epitaxial 001 SrTiO3 films grown on 001
LaAlO3 substrates with SrRuO3 buffer layers. A theoretical analysis has been undertaken to
understand the variation of the lattice parameters of SrTiO3 epitaxial films, taking into account stress
relaxation due to the formation of an orthorhombic polydomain structure in the SrRuO3 buffer layer
as well as the formation of misfit dislocations at the LaAlO3 /SrRuO3 and the SrTiO3 /SrRuO3
interfaces. There exists a critical SrRuO3 buffer layer thickness, above which the SrRuO3 buffer
layer can ``screen'' the effect of the LaAlO3 substrate. It is shown that the internal stress level in
films can be controlled using buffer layers that exhibit a structural phase transformation. © 2004
American Institute of Physics. DOI: 10.1063/1.1760228
In recent years, there is a growing interest in perovskite
thin films due to their unique electrical, electromechanical,


Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut


Collections: Materials Science