Summary: Charge distribution on thin semiconducting silicon nanowires
Hui Chen a
, Subrata Mukherjee a,*, Narayan Aluru b
Department of Theoretical and Applied Mechanics, Kimball Hall, Cornell University, Ithaca, NY 14853, United States
Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, IL 61801, United States
Received 18 September 2007; received in revised form 8 February 2008; accepted 12 February 2008
Available online 20 February 2008
The subject of this paper is the calculation of charge distribution on and inside thin semiconducting silicon nanowires in electrostatic
problems, by a coupled finite and boundary element method (FEM/BEM). A hybrid semi-classical (Laplace/Poisson) model is employed
and a line model (with finite thickness) for a silicon nanowire of circular cross-section is proposed here. This model overcomes the prob-
lem of dealing with nearly singular matrices that occur when the standard BEM is applied to very thin features (objects or gaps). This
new approach is also very efficient. Numerical results are presented for selected examples.
Ó 2008 Elsevier B.V. All rights reserved.
Keywords: Charge distribution; Semiconducting silicon nanowires; Boundary element method; Finite element method
Microelectromechanical systems (MEMS) have demon-
strated important applications in a wide variety of indus-