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Three-domain architecture of stress-free epitaxial ferroelectric films A. L. Roytburda)
 

Summary: Three-domain architecture of stress-free epitaxial ferroelectric films
A. L. Roytburda)
and S. P. Alpayb)
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
L. A. Bendersky
Materials Science and Engineering Laboratory, National Institute of Standards and Technology,
Gaithersburg, Maryland 20899
V. Nagarajan and R. Ramesh
Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742
Received 27 June 2000; accepted for publication 2 October 2000
Epitaxial ferroelectric films undergoing a cubic-tetragonal phase transformation relax internal
stresses due to the structural phase transformation and the difference in the thermal expansion
coefficients of the film and the substrate by forming polydomain structures. The most commonly
observed polydomain structure is the c/a/c/a polytwin which only partially relieves the internal
stresses. Relatively thicker films may completely reduce internal stresses if all three variants of the
ferroelectric phase are brought together such that the film has the same in-plane size as the substrate.
In this article, we provide experimental evidence on the formation of the three-domain structure
based on transmission electron microscopy in 450 nm thick 001 PbZr0.2Ti0.8O3 films on 001
SrTiO3 grown by pulsed laser deposition. X-ray diffraction studies show that the film is fully
relaxed. Experimental data is analyzed in terms of a domain stability map. It is shown that the

  

Source: Alpay, S. Pamir - Department of Materials Science and Engineering, University of Connecticut

 

Collections: Materials Science