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Summary: AN UNCOOLED MICROBOLOMETER INFRARED DETECTOR
IN ANY STANDARD CMOS TECHNOLOGY
D.S. Tezcan*, F. Koçer*, and T. Akin*,
**
*Middle East Technical University, Dept of Electrical and Electronics Engineering, Ankara, Turkey
** TUBITAK-BILTEN, Middle East Technical University, Ankara, Turkey
Phone: +90 (312) 210-2369 Fax: +90 (312) 210-1261 e-mail: tayfun-akin@metu.edu.tr
ABSTRACT
This paper reports a new microbolometer structure
with the CMOS n-well layer as the active element.
The n-well structures are suspended and thermally
isolated by post-etching of fabricated and bonded
CMOS chips, while the n-well regions are protected
from etching by the electrochemical etch-stop
technique in a TMAH solution. The characterization
results of the fabricated chips show that the n-well
has a TCR value of 0.50%/K at 300K in a
commercial 0.8µm CMOS process. Detailed thermal
simulations in ANSYS were performed to obtain an
optimized structure. These results and calculations
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