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494 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 2, FEBRUARY 2003 A Low-Cost Uncooled Infrared Microbolometer
 

Summary: 494 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 50, NO. 2, FEBRUARY 2003
A Low-Cost Uncooled Infrared Microbolometer
Detector in Standard CMOS Technology
Deniz Sabuncuoglu Tezcan, Member, IEEE, Selim Eminoglu, Member, IEEE, and Tayfun Akin, Member, IEEE
Abstract--This paper reports the development of a low-cost
uncooled infrared microbolometer detector using a commercial
0.8 m CMOS process, where the CMOS n-well layer is used
as the infrared sensitive material. The n-well is suspended by
front-end bulk-micromachining of the fabricated CMOS dies
using electrochemical etch-stop technique in TMAH. Since this
approach does not require any lithography or infrared sensitive
material deposition after CMOS fabrication, the detector cost
is almost equal to the CMOS chip cost. The n-well has a TCR
of 0.50.7%/K, relatively low compared to state-of-the-art mi-
crobolometer materials; however, it has negligible 1 noise due
to its single crystal structure. The use of polysilicon interconnects
on the support arms instead of metal reduces the overall pixel
TCR to 0.34%/K, but provides a better performance due to
improved thermal isolation. Measurements show that such a
fabricated pixel with 74 m 74 m pixel area provides a

  

Source: Akin, Tayfun - Department of Electrical and Electronics Engineering, Middle East Technical University

 

Collections: Engineering