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MBE Growth of Cubic InN Jrg Schrmann, Donat Josef As, and Klaus Lischka
 

Summary: MBE Growth of Cubic InN
Jörg Schörmann, Donat Josef As, and Klaus Lischka
Department of Physics, University of Paderborn, Warburger Strasse 100, Paderborn, 33095,
Germany
ABSTRACT
Cubic InN films were grown on top of a c-GaN buffer layer by rf-plasma assisted MBE at
different growth temperatures. X-Ray diffraction investigations show that the c-InN layers
consist of a nearly phase-pure zinc blende (cubic) structure with a small fraction of the wurtzite
(hexagonal) phase grown on the (111) facets of the cubic layer. The content of hexagonal
inclusions is decreasing with decreasing growth temperature. The full-width at half-maximum
(FWHM) of c-InN (002) rocking curve is about 50 arcmin. Low temperature photoluminescence
measurements reveal a band gap of about 0.61eV for cubic InN.
INTRODUCTION
Among nitride semiconductors, InN is the least investigated of all and is expected to be a
promising material for high frequency electronic devices [1,2]. The most important recent
discovery about InN is that it has a much narrower band-gap than reported previously. For h-
InN values between 0.6 eV and 0.7 eV are measured [3,4]. Group III-nitrides with cubic crystal
structure are expected to have even lower band gaps and can be grown on substrates with cubic
structure. However, the zincblende polytype is metastable and only a very narrow growth
window is available for the process conditions [5]. The use of nearly lattice matched, free

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics