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Room temperature green light emission from nonpolar cubic InGaN/GaN multi-quantum-wells

Summary: Room temperature green light emission from nonpolar cubic InGaN/GaN
Shunfeng Li,a
Jörg Schörmann, Donat J. As, and Klaus Lischkab
Department of Physics, Universität Paderborn, D-33098 Paderborn, Germany
Received 21 November 2006; accepted 14 January 2007; published online 12 February 2007
Cubic InGaN/GaN multi-quantum-wells MQWs with high structural and optical quality are
achieved by utilizing freestanding 3C-SiC 001 substrates and optimizing InGaN quantum well
growth. Superlattice peaks up to fifth order are clearly resolved in x-ray diffraction. Bright green
room temperature photoluminescence PL from c-InxGa1-xN/GaN MQWs x=0.16 is observed.
The full width at half maximum of the PL emission is about 240 meV at 300 K. The PL intensity
increases with well thickness, prooving that polarization fields which can limit the performance of
the wurtzite III-nitride based devices are absent. The diffusion length of excess carriers is about
17 nm. © 2007 American Institute of Physics. DOI: 10.1063/1.2475564
Group III-nitride crystallizes in the stable wurtzite hex-
agonal structure or in the metastable zinc blende cubic
structure. Currently, state-of-the-art nitride based devices are
grown along the polar c axis of the wurtzite III-nitride unit
cell. Due to strong polarization field along the c axis, the
electron-hole pairs within quantum wells are separated,


Source: As, Donat Josef - Department Physik, Universität Paderborn


Collections: Materials Science; Physics