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Transit-time spin field-effect transistor Ian Appelbauma
 

Summary: Transit-time spin field-effect transistor
Ian Appelbauma
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716
Douwe J. Monsma
Cambridge NanoTech, Inc., Cambridge, Massachusetts 02139
Received 12 February 2007; accepted 8 May 2007; published online 25 June 2007
The authors propose and analyze a four-terminal metal-semiconductor device that uses hot-electron
transport through thin ferromagnetic films to inject and detect a charge-coupled spin current
transported through the conduction band of an arbitrary semiconductor. This provides the possibility
of realizing a spin field-effect transistor in Si using electrostatic transit-time control of coherent spin
precession in a perpendicular magnetic field. 2007 American Institute of Physics.
DOI: 10.1063/1.2752015
When Datta and Das first introduced the spin field-effect
transistor spin-FET in 1990, they ignited years of experi-
mental efforts to create a device wherein the electron trans-
port is modulated by electrostatic control of electron spin
direction.1
They proposed that in the semiconductor channel
between a ferromagnetic FM source providing spin polar-
ized electrons and a FM spin-analyzing drain, the presence

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science