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Physica B 308310 (2001) 126129 Properties of carbon as an acceptor in cubic GaN
 

Summary: Physica B 308­310 (2001) 126­129
Properties of carbon as an acceptor in cubic GaN
U. K.ohler*, M. L.ubbers, J. Mimkes, D.J. As
Universit.at Paderborn, FB6 F Physik, Warburger Str. 100, 33098 Paderborn, Germany
Abstract
Cubic gallium nitride epilayers were successfully doped with carbon using an e-beam evaporation source. Room
temperature Hall measurements revealed hole concentrations up to 6 Â 1017
cmÀ3
and hole mobilities of 200 cm2
/V s.
Low temperature (2 K) photoluminescence showed a donor­acceptor transition at 3.08 eV, which could clearly be
assigned to the incorporation of a carbon acceptor. Thermal activation measurements were performed. They exhibited
an activation energy of EA ¼ 215 meV both in photoluminescence and electrical measurements, respectively. r 2001
Elsevier Science B.V. All rights reserved.
Keywords: GaN; Carbon; Acceptor; Doping
1. Introduction
Gallium nitride (GaN) and GaN-based ternaries are
semiconductors currently in the focus of both scientific
and industrial research. Due to their large band gap they
are well-suited for a wide range of applications, e.g. as

  

Source: As, Donat Josef - Department Physik, Universität Paderborn

 

Collections: Materials Science; Physics