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Magnetization switching in alternating width nanowire arrays S. Goolaup and A. O. Adeyeye*
 

Summary: Magnetization switching in alternating width nanowire arrays
S. Goolaup and A. O. Adeyeye*
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore,
4 Engineering Drive 3, 117576, Singapore
N. Singh
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685, Singapore
G. Gubbiotti
CNISM, Dipartimento di Fisica, UniversitÓ di Perugia, Via A. Pascoli, I-06123 Perugia, Italy
Received 8 December 2006; revised manuscript received 14 February 2007; published 30 April 2007
A systematic investigation of the magnetization reversal mechanism in arrays of Ni80Fe20 nanowires with
alternating width is presented. The structures were fabricated using deep ultraviolet lithography followed by
lift-off technique at 248 nm exposure wavelength. We have mapped the magnetization reversal processes and
observed that the switching mechanism is very sensitive to the thickness to width ratio of the nanowires. For
wire thickness, t 40 nm, spin rotation dominates the reversal process. For t 40 nm, however, the reversal
process is mediated by the curling mode of reversal. The dipolar field is strongly influenced by the nanowire
of larger width in the alternating width array. Our results were compared with homogeneous width nanowire
array of similar thicknesses and marked differences were observed.
DOI: 10.1103/PhysRevB.75.144430 PACS number s : 75.75. a, 75.60.Jk
I. INTRODUCTION
Patterned arrays of highly ordered nanomagnets have at-

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science