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Magnetoresistance behavior of nanoscale antidot arrays C. C. Wang and A. O. Adeyeye*
 

Summary: Magnetoresistance behavior of nanoscale antidot arrays
C. C. Wang and A. O. Adeyeye*
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, 4 Engineering Drive 3, 117576 Singapore
N. Singh
Institute of Microelectronics, 11 Science Park Road, Singapore Science Park II, 117685 Singapore
Y. S. Huang and Y. H. Wu
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, 4 Engineering Drive 3, 117576 Singapore
Received 2 July 2005; revised manuscript received 14 September 2005; published 28 November 2005
We investigate the transport properties of nanometer-scale Ni80Fe20 antidot arrays fabricated using deep
ultraviolet lithography. Magnetotransport measurements have been shown as a powerful and sensitive tech-
nique in mapping the magnetization reversal process in complex magnetic structures. Compared with continu-
ous film, a drastic increase in coercivity in the antidot structures due to local modification of the spin configu-
rations was observed. We found that the current density distribution is periodically modulated by the presence
of holes, which gives rise to the interesting high-field sloping behavior of the magnetoresistance MR . The
effect of antidot film thickness for fixed lateral geometry on the MR response was also investigated, and the
reversal process was found to be strongly dependent on the antidot film thickness. Our experimental results
were further verified by magnetic hysteresis measurements and micromagnetic simulations, which show good
agreement with the experimental MR data.

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science