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Spin dephasing in drift-dominated semiconductor spintronics devices Biqin Huang* and Ian Appelbaum
 

Summary: Spin dephasing in drift-dominated semiconductor spintronics devices
Biqin Huang* and Ian Appelbaum
Electrical and Computer Engineering Department, University of Delaware, Newark, Delaware 19716, USA
Received 11 January 2008; published 22 April 2008
A spin-transport model is employed to study the effects of spin dephasing induced by diffusion-driven
transit-time uncertainty through semiconductor spintronic devices where drift is the dominant transport mecha-
nism. It is found that in the ohmic regime, dephasing is independent of transit length and determined primarily
by voltage drop across the spin-transport region. The effects of voltage and temperature predicted by the model
are compared to experimental results from a 350- m-thick silicon spin-transport device using derived math-
ematical expressions of spin dephasing.
DOI: 10.1103/PhysRevB.77.165331 PACS number s : 85.75. d, 72.25.Dc, 72.25.Hg, 72.25.Rb
I. INTRODUCTION
Employing electron spin in semiconductor devices could
potentially overcome scaling issues with modern charge-
based electronics, providing more power efficiency, higher
speed, and greater functionality.110 In many spintronic de-
vice designs, spin precession during transport from injector
to detector plays a primary role in determining device output
characteristics. This precession is caused by a torque exerted
either by effective11

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park

 

Collections: Engineering; Materials Science