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Summary: Low-Cost Low Actuation Voltage Copper RF MEMS
Switches
Devarajan Balaraman, Swapan K. Bhattacharya, Farrokh Ayazi, John Papapolymerou
School of Electrical and Computer Engineering
Georgia Institute of Technology
Atlanta, GA 30332-0250
Email: ayazi@ece.gatech.edu; Tel: (404) 894-9496; Fax: (404) 894-4700
Abstract -- This paper presents the design, fabrication
and testing of capacitive copper RF MEMS switches with
various hinge geometries, fabricated on high-resistivity
silicon substrate. The switches were fabricated using a
simple low-cost four-mask process and 0.6-1.0µm thick
membranes were made out of sputtered copper. The
capacitive airgap in between the membrane and the signal
line is 1.5-2.0µm. The lowest actuation voltage measured on
the fabricated switches is 9V. The measured insertion loss of
a fabricated switch and its associated transmission line was
0.9dB (mainly contributed by the transmission line itself)
and the isolation was measured to be 25dB at 40GHz.
I. INTRODUCTION
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