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Properties of WGeN as a diffusion barrier material for Cu S. Rawal and D. P. Nortona
 

Summary: Properties of WGeN as a diffusion barrier material for Cu
S. Rawal and D. P. Nortona
Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611
T. J. Anderson
Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611
L. McElwee-White
Department of Chemistry. University of Florida, Gainesville, Florida 32611
Received 12 May 2005; accepted 1 August 2005; published online 6 September 2005
The properties of WGeN thin films are reported, focusing on issues relevant to their use as
diffusion barriers for Cu metallization on silicon. The amorphous WGeN thin films were
deposited on thermally grown SiO2/Si using reactive sputter deposition. This was followed by in
situ deposition of Cu films. Annealing studies for WGeN were then carried out in a vacuum to
investigate Cu diffusion and barrier film crystallization. X-ray diffraction was used to assess the
crystallinity of the films upon annealing. The results show that WGeN has a recrystallization
temperature that is higher that that for WNx. Auger electron spectroscopy was used to measure the
depth profile of Cu diffusion through the barrier layer. Little or no Cu diffusion was detected for a
relatively high annealing temperature. The WGeN films were conductive, although the resistivity
is somewhat higher than that for WNx. The results suggest that WGeN may be an attractive
diffusion barrier material for Si or SiGe devices. 2005 American Institute of Physics.
DOI: 10.1063/1.2042534

  

Source: Anderson, Timothy J. - Chemical Engineering Department, University of Florida

 

Collections: Materials Science