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Magnetic properties of half-metallic Fe3O4 films S. Jain and A. O. Adeyeyea)
 

Summary: Magnetic properties of half-metallic Fe3O4 films
S. Jain and A. O. Adeyeyea)
Information Storage Materials Laboratory, Department of Electrical and Computer Engineering,
National University of Singapore, Singapore
D. Y. Dai
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore
Presented on 8 January 2004
We have investigated in a systematic way the magnetic properties of Fe3O4 films grown directly on
a Si 001 substrate and on a copper Cu buffer layer using the electron beam deposition technique.
The effect of the Cu buffer layer thickness on the microstructure and magnetic properties of Fe3O4
has been studied. The effect of annealing on the magnetic properties of Fe3O4 films with various Cu
buffer layer thicknesses was also studied. For Fe3O4 films deposited directly on Si 001 , we
observed two distinct switching fields due to the presence of two magnetic phases which are weakly
coupled at the substrate interface. 2004 American Institute of Physics.
DOI: 10.1063/1.1651800
Recently, the magnetic properties of half-metallic films
have attracted enormous attention due to their potential in
applications in the area of so-called spintronics. Half metals
are defined as magnetic materials showing a band gap at the
Fermi energy for one spin direction.1

  

Source: Adeyeye, Adekunle - Department of Electrical and Computer Engineering, National University of Singapore

 

Collections: Physics; Materials Science