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Ballistic electron emission luminescence Ian Appelbauma)
 

Summary: Ballistic electron emission luminescence
Ian Appelbauma)
Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 and
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
K. J. Russell, V. Narayanamurti, D. J. Monsma, and C. M. Marcus
Division of Engineering and Applied Sciences and Department of Physics, Harvard University,
Cambridge, Massachusetts 02138
M. P. Hanson and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106
H. Temkin
Department of Electrical Engineering, Texas Tech University, Lubbock, Texas 79409
C. H. Perry
Department of Physics, Northeastern University, Boston, Massachusetts 02115
Received 3 March 2003; accepted 18 April 2003
We describe the design, fabrication, and operation of a GaAs-based heterostructure device which
emits band gap luminescence from solid-state tunnel-junction ballistic injection of electrons with
sub-bandgap energy. We find that, due to energy conservation requirements, a collector bias
exceeding a threshold determined by the Schottky barrier height and sample band gap energy must
be applied for luminescence emission. The consequences of these results for a hybrid
scanning-probe microscopy and spectroscopy combining both ballistic electron emission

  

Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park
Narayanamurti, Venky - School of Engineering and Applied Sciences, Harvard University
Russell, Kasey - School of Engineering and Applied Sciences, Harvard University

 

Collections: Engineering; Materials Science