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EFFECT OF PRESSURE ON BORON DIFFUSION IN SILICON Yuechao Zhao1, Michael J. Aziz1, Salman Mitha2, and David Schiferl3
 

Summary: EFFECT OF PRESSURE ON BORON DIFFUSION IN SILICON
Yuechao Zhao1, Michael J. Aziz1, Salman Mitha2, and David Schiferl3
1Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138
2Charles Evans and Associates, Redwood City, CA 94063
3Los Alamos National Laboratory, Los Alamos, NM 87545
ABSTRACT
We are studying the effect of pressure on boron diffusion in silicon in order to better
understand the nature of the point defects responsible for diffusion. Si homoepitaxial layers delta-
doped with boron were grown using molecular beam epitaxy. Diffusion anneals were performed
in a high temperature diamond anvil cell using fluid argon as a pressure medium. Diffusivities
were deduced from B concentration-depth profiles measured with using secondary ion mass
spectrometry. Preliminary results indicate that pressure enhances B diffusion in Si at 850 C,
characterized by an average activation volume of -0.1250.02 times the atomic volume, and thus
appear consistent with an interstitial-based diffusion mechanism. Results are compared with
previous hydrostatic-pressure studies, with results in biaxially strained films, and with atomistic
calculations of activation volumes for self diffusion.
INTRODUCTION
Because understanding and controlling diffusion related phenomena become increasingly
important as semiconductor device dimensions decrease, diffusion in semiconductors has been
heavily studied. Despite this emphasis there remains no consensus about the relative

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science