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Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under Extreme Ga Excess
 

Summary: Electrical and Optical Properties of Carbon Doped Cubic GaN Epilayers Grown Under
Extreme Ga Excess
D. J. As, D.G. Pacheco-Salazar
, S. Potthast, and K. Lischka,
University of Paderborn, Faculty of Science, Department of Physics, Warburger Strasse 100,
D-33095 Paderborn, Germany, d.as@uni-paderborn.de
ABSTRACT
P-type doping of cubic GaN by carbon is reported with maximum hole concentration of
6.1x1018
cm-3
and hole mobility of 23.5 cm2/Vs at room temperature, respectively. The cubic
GaN:C was grown by rf-plasma assisted molecular beam epitaxy (MBE) under Ga-rich growth
conditions on a semiinsulating GaAs (001) substrate (3 inches wafer). E-beam evaporation of a
graphite rode with an C-flux of 1x1012
cm-2
s-1
was used for C-doping of the c-GaN. Optical
microscopy, Hall-effect measurements and photoluminescence were performed to investigate the
morphological, electrical and optical properties of cubic GaN:C. Under Ga-rich growth
conditions most part of the carbon atoms were incorporated substitutially on N-site giving p-type

  

Source: As, Donat Josef - Department Physik, Universitšt Paderborn

 

Collections: Materials Science; Physics