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Avalanche spin-valve transistor K. J. Russell,a)

Summary: Avalanche spin-valve transistor
K. J. Russell,a)
Ian Appelbaum,b)
Wei Yi, D. J. Monsma, F. Capasso,
C. M. Marcus, and V. Narayanamurti
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
M. P. Hanson and A. C. Gossard
Materials Department, University of California, Santa Barbara, California 93106
(Received 11 June 2004; accepted 10 September 2004)
A spin-valve transistor with a GaAs/AlGaAs avalanche-multiplying collector is demonstrated with
1000% magnetocurrent variation and 35 amplification of the collector current. The intrinsic
amplification of the magnetic-field sensitive collector current should allow fabrication of spin-valve
transistors with high gain in a variety of materials. 2004 American Institute of Physics.
[DOI: 10.1063/1.1818339]
With the discovery of the giant magnetoresistance
in magnetic multilayer films, a new class of solid-
state magnetic field sensors was developed based on spin-
dependent scattering. Among these is the spin-valve


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park
Russell, Kasey - School of Engineering and Applied Sciences, Harvard University


Collections: Engineering; Materials Science