Summary: Carbon as an acceptor in cubic GaN/3C­SiC
A. Zado a,n
, E. Tschumak a
, J.W. Gerlach b
, K. Lischka a
, D.J. As a
a
University of Paderborn, Department of Physics, Warburger Straße 100, D-33098 Paderborn, Germany
b
Leibniz-Institut f¨ur Oberfl¨achenmodifizierung e.V., Permoserstraße 15, D-04318 Leipzig, Germany
a r t i c l e i n f o
Available online 22 December 2010
Keywords:
A1. Characterization
A1. Doping
A1. Semiconducting III­V materials
A3. Molecular beam epitaxy
B1. Gallium compounds
B1. Nitrides
B2. Semiconducting gallium compounds

Source: As, Donat Josef - Department Physik, Universität Paderborn

Collections: Materials Science; Physics