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PHYSICAL REVIEW B 83, 224206 (2011) Diamond membrane surface after ion-implantation-induced graphitization for graphite removal
 

Summary: PHYSICAL REVIEW B 83, 224206 (2011)
Diamond membrane surface after ion-implantation-induced graphitization for graphite removal:
Molecular dynamics simulation
Amihai Silverman
Taub Computer Center, Technion-IIT, Haifa 32000, Israel
Joan Adler
Department of Physics, Technion-IIT, Haifa 32000, Israel
Rafi Kalish
Department of Physics and Solid State Institute, Technion-IIT, Haifa 32000, Israel
(Received 14 February 2011; revised manuscript received 8 May 2011; published 28 June 2011)
Fabrication of diamond membranes, wherein photonic crystals and other nanosized optical devices can be
realized, is of great importance. Many spintronic devices are based on specific optically active atomic structures
in diamond, such as the nitrogen-vacancy center, and rely on the membrane's performance. One promising
approach for realizing such membranes is by creating a heavily damaged layer (rich in broken bonds) in
diamond by ion implantation. Following annealing, this layer converts to graphite, which can be chemically
removed, leaving a free-standing diamond membrane. Unfortunately, the optical properties of the exposed
diamond surface (the diamond-vacuum interface) of such membranes currently are insufficient for high-quality
photonic devices. We present molecular dynamics studies of the atomic structure of the etchable graphite/diamond
interface. Different implantation and annealing conditions are simulated. The results show that cold implantation,
followed by high-temperature annealing (>1500

  

Source: Adler, Joan - Physics Department, Technion, Israel Institute of Technology

 

Collections: Physics