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Modeling a Growth Instability in Stressed Boron Doped Silicon , T. Kaplan

Summary: Modeling a Growth Instability in Stressed Boron Doped Silicon
A.-V. Phan
, T. Kaplan
, L.J. Gray
, W. Barvosa-Carter
and M.J. Aziz

Oak Ridge National Laboratory, CSMD
Oak Ridge, TN, USA, phana@ornl.gov, tsk@ornl.gov, ljg@ornl.gov

HRL Laboratories, Malibu, CA 90265, USA, wbc@hrl.com

Harvard University, Cambridge, MA, USA, aziz@deas.harvard.edu
The effects of rate-enhancing dopants and externally
applied stress on interfacial growth during silicon crys-
tallization are modeled using advanced numerical meth-
ods. The boron doped crystalline Si is modeled as an
isotropic linear elastic solid, and the amorphous as a
viscous fluid with a time dependent viscosity to reflect


Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University


Collections: Physics; Materials Science