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We present an analytical model for the impact ionization and polysilicon (poly) gate depletion effects on the I-V characteristics
 

Summary: ABSTRACT
We present an analytical model for the impact ionization and
polysilicon (poly) gate depletion effects on the I-V characteristics
of the n-channel MOSFET device operating in both linear and
saturation regimes. The model is applicable for both source and
substrate reference models. I-V characteristics of the MOS device
at thin gate oxides (below 4.5nm) and shorter channel length
(below 250nm) is significantly affected by these two effects. The
poly depletion effect affects the device operation in both linear and
saturation regimes [1, 2]. However, the impact ionization effect is
only noticeable at saturation due to an increase in the device
substrate current [15, 16]. In this paper the channel current
reduction model due to poly depletion is expressed in terms of the
doping concentration on both sides of the gate oxide and its
thickness. This is achieved by directly solving the Poisson equation
on the poly and silicon sides using asymptotic methods. We
combine the substrate current model of [16] together with the poly
depletion model.
Keywords: Compact modeling, EKV, MOSFETs, polysilicon
depletion effect, impact ionization, substrate current.

  

Source: Abebe, Henok - Department of Physics and Astronomy, California State University, Los Angeles

 

Collections: Physics