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Tunable Silicon Bulk Acoustic Resonators with Multi-Face AlN Transduction
 

Summary: Tunable Silicon Bulk Acoustic Resonators with
Multi-Face AlN Transduction
Roozbeh Tabrizian and Farrokh Ayazi
School of Electrical and Computer Engineering
Georgia Institute of Technology
Atlanta, USA
roozbeh@gatech.edu; ayazi@gatech.edu
Abstract--This paper presents tunable width-extensional mode
bulk acoustic resonators that are piezoelectrically-actuated and
sensed using thin layers of AlN on the sidewalls as well as the top
surface. By using both longitudinal and transverse piezoelectric
effects of conformally-sputtered AlN layers on sidewalls and top
surface of a 20 m thick resonator, a low motional resistance of
~35 was achieved for a 100 MHz silicon resonator operating in
air. The motional resistance is improved by at least 10x
compared to similar devices with capacitive transduction.
Furthermore, it is shown that the resonance frequency of these
piezoelectrically-transduced devices can be tuned by varying the
electric signal power from 0 to 7 dBm.
I. INTRODUCTION

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering