Summary: THz & nmTransistors:
Scaling Laws & State Density Limits.
rodwell@ece.ucsb.edu 805-893-3244, 805-893-5705 fax
THz Seminar, UCSB, February 17, 2011
Mark Rodwell
University of California, Santa Barbara
HBT
V. Jain, E. Lobisser, A. Baraskar, J. Rode, H.W. Chiang, B. J. Thibeault, UCSB
M. Urteaga, M. Seo, Z. Griffith, J. Hacker, R. Pierson, P. Rowell, B. Brar, Teledyne Scientific Company
III-V MOSFETs
A. Carter, J. Law, G. J. Burek, Y. Hwang, B. J. Thibeault, B. Mitchell, S. Stemmer, A. C. Gossard, C. Palmstrom, UCSB
E. Kim, P. C. McIntyre Stanford University
Ohmic Contacts:
A. Baraskar, A. C. Gossard UCSB
High-Current FET Channels:
P. Asbeck: University of California, San Diego
W. Frensley: University of Texas, Dallas
S. Steiger, A. Paul, S. Lee, Y. Tan, G. Hegde, G. Klimeck, Purdue University
T. Boykin University of Alabama, Huntsville
DC to daylight; far-infrared Integated Circuits

Source: Ahlers, Guenter - Department of Physics, University of California at Santa Barbara

Collections: Physics