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Comparison of morphology evolution of Ge,,001... homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy
 

Summary: Comparison of morphology evolution of Ge,,001... homoepitaxial films grown
by pulsed laser deposition and molecular-beam epitaxy
Byungha Shin, John P. Leonard,a
James W. McCamy,b
and Michael J. Azizc
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 26 May 2005; accepted 26 August 2005; published online 28 October 2005
Using a dual molecular-beam epitaxy MBE ­pulsed laser deposition PLD ultrahigh vacuum
chamber, we have conducted the first experiments under identical thermal, background, and surface
preparation conditions to compare Ge 001 homoepitaxial growth morphology in PLD and MBE.
We find that in PLD with low kinetic energy and in MBE the film morphology evolves in a similar
fashion: initially irregularly shaped mounds form, followed by pyramidal mounds with edges of the
square-base along the 100 directions; the film roughness and mound separation increase with film
thickness. In PLD with high kinetic energy, well-defined pyramidal mounds are not observed and
the morphology rather resembles that of an ion-etched Ge 001 surface. The areal feature density is
higher for PLD films than for MBE films grown at the same average growth rate and temperature.
Furthermore, the dependence upon film thickness of roughness and feature separation differ for PLD
and MBE. We attribute these differences to the higher yield of defect generation by energetic species
in PLD. © 2005 American Institute of Physics. DOI: 10.1063/1.2108115
While both pulsed laser deposition PLD and

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science