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Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens
 

Summary: Enhanced visible and near-infrared optical absorption in silicon
supersaturated with chalcogens
Si H. Pan1
, Daniel Recht2
, Supakit Charnvanichborikarn3
, James S. Williams3
, and Michael J.
Aziz2
1. Martin A. Fisher School of Physics, Brandeis University, Waltham, Massachusetts
2. Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts
3. Department of Electronic Materials Engineering, Research School of Physics and
Engineering, The Australian National University, Canberra, ACT 0200, Australia
We show that single-crystal silicon supersaturated with sulfur (S), selenium (Se), or tellurium
(Te) displays a substantially enhanced absorption coefficient for light with wavelengths of 400 to
1600 nm. Alloys were prepared in silicon on insulator wafers by ion implantation followed by
nanosecond pulsed laser melting. Measurements of the absorption coefficient were made by
direct transmission through freestanding thin films and by spectroscopic ellipsometry.
Enhanced visible-range optical absorption... 12/21/10 page 2
Chalcogen-rich silicon formed by repeated femtosecond or nanosecond pulsed-laser
irradiation of silicon wafers in the presence of SF6 exhibits near-unity below-band-gap

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science