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Atomistic studies of segregation and diffusion in Al-Cu grain boundaries Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
 

Summary: Atomistic studies of segregation and diffusion in Al-Cu grain boundaries
X.-Y. Liu
Department of Materials Science and Engineering, University of Illinois, Urbana, Illinois 61801
Wei Xu
Lawrence Livermore National Laboratory, University of California, Livermore, California 94551
S. M. Foiles
Sandia National Laboratories, Livermore, California 94550
J. B. Adams
Department of Chemical, Bio. and Materials, Arizona State University, Tempe, Arizona 85287-6006
Received 13 October 1997; accepted for publication 3 February 1998
The segregation of Cu atoms at Al 110 11 and 001 5 tilt grain boundaries was studied. Cu
atoms were found to segregate to asymmetric sites at the 11 boundary and form zig-zag planar
aggregates at the interface. Segregation is dominated by atomic size and local hydrostatic stress. Cu
atoms prefer to occupy the prime diffusion path sites at both grain boundaries. Cu segregation raises
the vacancy formation and diffusion activation energies at 11 grain boundaries, thus slowing the
rate of atomic diffusion. 1998 American Institute of Physics. S0003-6951 98 04213-2
Electromigration in the narrow, passivated metal lines
used as interconnects in ultra-large-scale integrated ULSI
microcircuits has been identified as a serious materials reli-
ability problem.1

  

Source: Adams, James B - Department of Chemical and Materials Engineering, Arizona State University

 

Collections: Materials Science