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2024 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 8, AUGUST 2007 Low-Impedance VHF and UHF Capacitive Silicon
 

Summary: 2024 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 54, NO. 8, AUGUST 2007
Low-Impedance VHF and UHF Capacitive Silicon
Bulk Acoustic-Wave Resonators--Part II:
Measurement and Characterization
Siavash Pourkamali, Member, IEEE, Gavin K. Ho, Student Member, IEEE, and Farrokh Ayazi, Senior Member, IEEE
Abstract--In this part of the paper, extensive measurement
results on the resonance, frequency tuning, and temperature char-
acteristics of the silicon bulk acoustic-wave resonators (SiBARs)
that were described in Part I will be presented and justified.
Index Terms--Bulk acoustic wave resonators, high-aspect-
ratio polysilicon and single-crystal silicon (HARPSS), MEMS,
micromachining, micromechanical resonators, silicon resonators.
I. FUNDAMENTAL MODE OPERATION
A. Two-Port Resonators
THE FABRICATED two-port high-aspect-ratio polysili-
con and single-crystal silicon (HARPSS)-on-silicon-on-
insulator (SOI) silicon bulk acoustic-wave resonators (SiBARs)
were tested in both vacuum and atmosphere using the test
setup that was described in Part I. Fig. 1 shows the measured
frequency response for a 300-Ám-long 50-Ám-wide 20-Ám-

  

Source: Ayazi, Farrokh - School of Electrical and Computer Engineering, Georgia Institute of Technology

 

Collections: Engineering