Home

About

Advanced Search

Browse by Discipline

Scientific Societies

E-print Alerts

Add E-prints

E-print Network
FAQHELPSITE MAPCONTACT US


  Advanced Search  

 
Catalyst-Free Gallium Nitride Nanowire Nucleation Faculty Advisor: Dr. Virginia M. Ayres
 

Summary: Catalyst-Free Gallium Nitride Nanowire Nucleation
Faculty Advisor: Dr. Virginia M. Ayres
Friday, August 14th, 2009
2:30 p.m. 4:30 p.m.
C103 Engineering Research Complex
Abstract:
Extensive research on nanowire devices and applications has unleashed exciting
possibilities in a quest for smaller, faster electronic equipment, more sensitive detectors,
and new devices that take advantage of the quantum mechanical world. One of the
roadblocks to these new technologies is a clear understanding of how nanowires are
formed and how to control their growth. Nanowire growths can be grouped in two broad
categories: catalytic growths and catalyst free growths. Catalyst free nanowire growths
are useful in applications where catalyst particles are not desirable.
This thesis deals exclusively with gallium nitride catalyst free nanowire
nucleation and growth mechanisms. GaN nanowires are of particular interest because of
GaN's unique optical and electronic properties. This thesis contributes fundamental
understanding of the formation mechanisms of catalyst free GaN nanowire growth
through investigations of the matrix from which the nanowires grow and through novel
use of the nanowires themselves as a diagnostic of their own growth mechanism. This
work shows that nanowire orientation changes as a function of growth temperature and

  

Source: Ayres, Virginia - Department of Electrical and Computer Engineering, Michigan State University

 

Collections: Materials Science; Biology and Medicine