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X-ray absorption spectra for transition metal high-dielectrics: Final state differences for intra-and inter-atomic transitions
 

Summary: X-ray absorption spectra for transition metal high- dielectrics:
Final state differences for intra- and inter-atomic transitions
G. Lucovskya)
Departments of Physics, Materials Science and Engineering, and Electrical and Computer Engineering,
North Carolina State University, Raleigh, North Carolina 27695-8202
J. G. Hong and C. C. Fulton
Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-8202
Y. Zou, R. J. Nemanich, and H. Ade
Department of Physics, North Carolina State University, Raleigh, North Carolina 27695-8202
Received 31 March 2004; accepted 26 April 2004; published 19 August 2004; published 19
August 2004
This article applies x-ray absorption spectroscopy to a study of the electronic structure of the high-k
gate dielectrics, TiO2 , ZrO2 , and HfO2 . Qualitative and quantitative differences are identified
between intra-atomic transitions such as the Zr 3p-state, M2,3 core state absorptions which
terminate in TM 4d*- and 5s*-states, and inter-atomic transitions such as the Zr 1s- and O 1s-state
K1 absorptions which terminate in Zr 4d*- and 5s*-states that are mixed with O atom 2p* states
through nearest neighbor bonding interactions. Differences between the spectral peak energies of the
lowest d*-features in the O K1 spectra are demonstrated to scale with optical band gap differences
for TiO2 , ZrO2 , and HfO2 , providing important information relevant to applications of TM oxides
as high- gate dielectrics in advanced Si devices. This is demonstrated through additional scaling

  

Source: Ade, Harald W.- Department of Physics, North Carolina State University

 

Collections: Physics