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Summary: POLY-SIGE HIGH FREQUENCY RESONATORS BASED ON LITHOGRAPHIC
DEFINITION OF NANO-GAP LATERAL TRANSDUCERS
Emmanuel P. Quévy, Sunil A. Bhave, Hideki Takeuchi, Tsu-Jae King, Roger T. Howe
Berkeley Sensor & Actuator Center, Electrical Engineering and Computer Sciences Department,
University of California at Berkeley, Berkeley, California 94720-1774
ABSTRACT
In this paper, we describe a new approach for fabrication of
micromechanical resonators for radio-frequency communication
applications. The proposed process provides ultra-narrow lateral
gaps using lithographically-defined sacrificial Ge blades. By using
Germanium as a sacrificial material, we eliminate the need for HF
etching to release mechanical structures and thereby simplify the
integration of these devices with CMOS electronics.
Polycrystalline silicon-germanium (poly-SiGe) is used as the
structural material in order to keep the thermal budget low
(maximum temperature 425°C), so as to be compatible with
CMOS metallization stacks. Resonators with frequencies up to
200MHz and Q ranging from 3,500 to 14,000 are demonstrated.
Index terms MEMS, resonator, silicon-germanium
INTRODUCTION
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