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POLY-SIGE HIGH FREQUENCY RESONATORS BASED ON LITHOGRAPHIC DEFINITION OF NANO-GAP LATERAL TRANSDUCERS
 

Summary: POLY-SIGE HIGH FREQUENCY RESONATORS BASED ON LITHOGRAPHIC
DEFINITION OF NANO-GAP LATERAL TRANSDUCERS
Emmanuel P. Quvy, Sunil A. Bhave, Hideki Takeuchi, Tsu-Jae King, Roger T. Howe
Berkeley Sensor & Actuator Center, Electrical Engineering and Computer Sciences Department,
University of California at Berkeley, Berkeley, California 94720-1774
ABSTRACT
In this paper, we describe a new approach for fabrication of
micromechanical resonators for radio-frequency communication
applications. The proposed process provides ultra-narrow lateral
gaps using lithographically-defined sacrificial Ge blades. By using
Germanium as a sacrificial material, we eliminate the need for HF
etching to release mechanical structures and thereby simplify the
integration of these devices with CMOS electronics.
Polycrystalline silicon-germanium (poly-SiGe) is used as the
structural material in order to keep the thermal budget low
(maximum temperature 425C), so as to be compatible with
CMOS metallization stacks. Resonators with frequencies up to
200MHz and Q ranging from 3,500 to 14,000 are demonstrated.
Index terms MEMS, resonator, silicon-germanium
INTRODUCTION

  

Source: Afshari, Ehsan - School of Electrical and Computer Engineering, Cornell University

 

Collections: Engineering