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Spin-valve photodiode Ian Appelbaum,a)

Summary: Spin-valve photodiode
Ian Appelbaum,a)
D. J. Monsma, K. J. Russell, V. Narayanamurti, and C. M. Marcus
Gordon McKay Laboratory, Harvard University, Cambridge, Massachusetts 02138
Received 7 July 2003; accepted 28 August 2003
An optical spin-valve effect is observed using sub-bandgap internal photoemission to generate and
collect hot electrons in magnetic multilayers grown on n-Si. Approximately 1.5%2.5%
magnetoresistance is observed in this two-terminal device at low temperature, and this effect is
reduced only to 1.1% at room temperature. A simple model is presented to explain the
results. 2003 American Institute of Physics. DOI: 10.1063/1.1623315
Electron spin transport in solid-state devices has recently
become an active area of research.1,2
Among many advances
in this field, the discovery35
of the giant magnetoresistance
GMR effect in magnetic multilayer films has led to the
development and application1,6
of entirely new magnetic
field sensors. These devices have most notably found use in
magnetic hard drive read heads.7


Source: Appelbaum, Ian - Department of Physics, University of Maryland at College Park


Collections: Engineering; Materials Science