Summary: Surface electronic structure of metastable FeSi,,CsCl...,,111... epitaxially grown on Si,,111...
J. J. Hinarejos, G. R. Castro, P. Segovia, J. Alvarez, E. G. Michel, R. Miranda, A. RodriŽguez-Marco, D. SaŽnchez-Portal,
E. Artacho, and F. YnduraŽin
Dto. de FiŽsica de la Materia Condensada and Instituto NicolaŽs Cabrera, Universidad AutoŽnoma, 28049 Madrid, Spain
S. H. Yang
Naval Research Laboratory, Washington, D.C. 20375-5345
Departamento de FiŽsica, Universidad de Oviedo, Calvo Sotelo s/n, 33007 Oviedo, Spain
J. B. Adams
Chemical, Bio, and Materials Department, Arizona State University, P.O. Box 876006, Tempe, Arizona 85287-6006
Received 3 February 1997
We report an investigation on the electronic structure of metastable, epitaxial FeSi films grown on Si 111 .
The electronic structure of the metastable silicides was probed with angle-resolved photoemission, and com-
pared with theoretical calculations. We identify the silicide as FeSi crystallizing in the CsCl structure. Its
surface is Fe terminated, and presents a prominent, strongly dispersing surface state at a binding energy of
3.5 eV in Ż. Its origin lies in the truncation of Fe bonds at the surface, and thus it has a major Fe dz2 content.
S0163-1829 97 50424-3
Iron silicides have been investigated during the last years
due to their interesting properties, both from fundamental
and applied points of view.19