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Summary: 1
Comparison of Morphology Evolution of Ge(001) Homoepitaxial Films Grown by
Pulsed Laser Deposition and Molecular Beam Epitaxy
Byungha Shin, John P. Leonard*, James W. McCamy**, and Michael J. Aziz***
Division of Engineering and Applied Sciences, Harvard University, Cambridge, MA
02138
Published as Applied Physics Letters 87, 181916 (2005).
This revised version, submitted August 22, 2005,
differs from final published version due to significant length cuts.
Abstract
Using a dual Molecular Beam Epitaxy (MBE)-Pulsed Laser Deposition (PLD)
Ultra-High Vacuum chamber, we have conducted the first experiments under identical
thermal, background, and surface preparation conditions to compare Ge(001)
homoepitaxial growth morphology in PLD and MBE. We find that in PLD with low
kinetic energy and in MBE the film morphology evolves in a similar fashion: initially
irregularly shaped mounds form, followed by pyramidal mounds with edges of the
square-base along <100> directions; the film roughness and mound separation increase
with film thickness. In PLD with high kinetic energy, well-defined pyramidal mounds
are not observed and the morphology rather resembles that of an ion-etched Ge(001)
surface. The areal feature density is higher for PLD films than for MBE films grown at
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