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Improved external cavity design for cesium D1 ,,894 nm... diode laser A. Andalkar,a)
 

Summary: Improved external cavity design for cesium D1 ,,894 nm... diode laser
A. Andalkar,a)
S. K. Lamoreaux,b)
and R. B. Warringtonc)
Department of Physics, Box 351560, University of Washington, Seattle, Washington 98195-1560
Received 26 February 1999; accepted for publication 28 August 2000
We have developed an external cavity diode laser for use near the cesium D1 transition at 894 nm,
producing over 20 mW of single-mode power with a continuous tuning range of up to 25 GHz. Our
mechanical design allows simple alignment and optimization of the cavity with very good passive
stability, as temperature control of the diode is not coupled with changes in cavity length, and it
could easily be used with diodes at other wavelengths. We detail the design and construction, and
review the performance of the current system, which has been in operation for several years.
2000 American Institute of Physics. S0034-6748 00 00212-4
I. INTRODUCTION
We have developed an external cavity diode laser system
with diffraction-grating feedback for use near the cesium D1
transition at 894 nm. Existing designs see, e.g., Refs. 16
did not suit our requirements for two reasons. First, the
EG&G C86136E laser diode commonly used for this wave-
length region is supplied with a thin silicon oxide coating on

  

Source: Andalkar, Amar - Department of Physics, University of Washington at Seattle
Washington at Seattle, University of - Department of Physics, Parity and Time Reversal Group

 

Collections: Physics