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Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur
 

Summary: Strong sub-band-gap infrared absorption in silicon supersaturated
with sulfur
T. G. Kim, Jeffrey M. Warrender,a
and Michael J. Aziz
Division of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138
Received 25 January 2006; accepted 27 April 2006; published online 12 June 2006
Silicon supersaturated with up to 0.6 at. % sulfur in solid solution was fabricated by ion
implantation and pulsed-laser-melting-induced rapid solidification. The optical absorption
coefficient over the range of 12002500 nm is uniformly high at 2.5 104
/cm, which is at least
an order of magnitude greater than the maximum value attributable to free carriers. High crystal
quality was confirmed by transmission electron microscopy and ion channeling. The absorption
coefficient decreases markedly with subsequent furnace annealing over the range of 200600 C.
We propose that the high absorptivity is due to a broad distribution of sulfur-related localized states
within the band gap. 2006 American Institute of Physics. DOI: 10.1063/1.2212051
Repeated pulsed laser irradiation of silicon in the pres-
ence of sulfur-bearing gases has been used to create micro-
structured silicon surfaces that exhibit high optical absorp-
tance in the near infrared 11002500 nm .13
These

  

Source: Aziz, Michael J.- School of Engineering and Applied Sciences, Harvard University

 

Collections: Physics; Materials Science